Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Hao Tien Daniel Lee"'
Publikováno v:
Sensors, Vol 14, Iss 8, Pp 14553-14566 (2014)
Metal-aluminum oxide–hafnium aluminum oxide‒silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high k stack gate dielectric) we
Externí odkaz:
https://doaj.org/article/7f8547c401304fff933ef0395153b1ca
Publikováno v:
Materials Science Forum. 977:250-255
The silicon-aluminum oxide-nitride-silicon oxide-silicon (hereafter SANOS) could be candidates for ultra violet total dose (hereafter UV TD) nonvolatile sensors. In the case of SANOS UV TD radiation sensors, the UV radiation induces a significant inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893f80f97e4c3f6d7b5d9fc9794fd056
https://doi.org/10.4028/www.scientific.net/msf.977.250
https://doi.org/10.4028/www.scientific.net/msf.977.250
Publikováno v:
Sensors, Vol 16, Iss 4, p 450 (2016)
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the
Externí odkaz:
https://doaj.org/article/5381dd00fb404cce81198d282a353310
Publikováno v:
Sensors (Basel, Switzerland)
Sensors; Volume 16; Issue 4; Pages: 450
Sensors, Vol 16, Iss 4, p 450 (2016)
Sensors; Volume 16; Issue 4; Pages: 450
Sensors, Vol 16, Iss 4, p 450 (2016)
Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3691484bb06400db2d92f32c09b6688
http://europepmc.org/articles/PMC4850964
http://europepmc.org/articles/PMC4850964
Publikováno v:
ICAIT
The silicon-oxide-nitride-oxide-silicon (SONOS) capacitor devices can be candidates for nonvolatile ultraviolet UV radiation sensors. In the case of SONOS type UV radiation sensors, the UV radiation induces a significant increase of threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec4fc4a90dcaf4d031c085373278c85
https://doi.org/10.1109/icait.2013.6621548
https://doi.org/10.1109/icait.2013.6621548
Publikováno v:
Sensors & Materials; 2018, Vol. 30 Issue 8, Part 2, p1831-1839, 9p
Publikováno v:
MATEC Web of Conferences, Vol 71, p 05007 (2016)
The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45f40540a75c77f8b684963366cea518
https://doi.org/10.1051/matecconf/20167105007
https://doi.org/10.1051/matecconf/20167105007
Publikováno v:
Proceedings of SPIE.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4812c8ec301a8cc56d316d17a614b61
https://doi.org/10.1117/12.829594
https://doi.org/10.1117/12.829594
Publikováno v:
MATEC Web of Conferences; 8/3/2016, Vol. 71, p1-4, 4p
Publikováno v:
Sensors & Materials; 2016, Vol. 28 Issue 9, p1023-1033, 11p