Zobrazeno 1 - 10
of 1 499
pro vyhledávání: '"Hao Chung Kuo"'
Autor:
Yun-Cheng Hsu, Yu-Hsuan Hsu, Chien-Chung Lin, Ming Hsien Wu, Hao Chung Kuo, Dong-Sing Wuu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Next Nanotechnology, Vol 7, Iss , Pp 100101- (2025)
This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emit
Externí odkaz:
https://doaj.org/article/4129a32d549c4dc498279341e6ce04ed
Publikováno v:
ACS Omega, Vol 8, Iss 38, Pp 35351-35358 (2023)
Externí odkaz:
https://doaj.org/article/f023523408454ebb9aad270de7cc822a
Autor:
Feng Huang, Jing Zhou Li, Zhu Hua Xu, Yuan Liu, Ri Peng Luo, Si Wei Zhang, Peng Bo Nie, Yan Fei Lv, Shi Xi Zhao, Wei Tao Su, Wen Di Li, Shi Chao Zhao, Guo Dan Wei, Hao Chung Kuo, Fei Yu Kang
Publikováno v:
Nanomaterials, Vol 9, Iss 9, p 1312 (2019)
Two-dimensional (2D) tungsten disulfide (WS2) has inspired great efforts in optoelectronics, such as in solar cells, light-emitting diodes, and photodetectors. However, chemical vapor deposition (CVD) grown 2D WS2 domains with the coexistence of a di
Externí odkaz:
https://doaj.org/article/e8044624225b4ea8947a7d5c220bfcfe
Autor:
Chun-Yen Peng, Hao-Tien Cheng, Yu-Heng Hong, Wen-Cheng Hsu, Fu-He Hsiao, Tien-Chang Lu, Shu-Wei Chang, Shih-Chen Chen, Chao-Hsin Wu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-10 (2022)
Abstract This study conducts comprehensive performance analyses of a commercial photonic-crystal surface-emitting laser (PCSEL) via small-signal measurement and the bit-error-rate test. Meanwhile, the radio frequency characteristics of the PCSEL are
Externí odkaz:
https://doaj.org/article/c5cbb2a737384b658f0fde5ecda8a8f0
Publikováno v:
Opto-Electronic Advances, Vol 5, Iss 6, Pp 1-24 (2022)
Augmented reality (AR) and virtual reality (VR) are two novel display technologies that are under updates. The essential feature of AR/VR is the full-color display that requires high pixel densities. To generate three-color pixels, the fluorescent co
Externí odkaz:
https://doaj.org/article/0bd1eedc01d64f23bd22e217a076ed9d
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-20 (2022)
Abstract Internet of Things (IoT) technology is prosperous for the betterment of human well-being. With the expeditious needs of miniature functional devices and systems for adaptive optics and light manipulation at will, relevant sensing techniques
Externí odkaz:
https://doaj.org/article/e39f307dab484592a0ab158ea9121845
Autor:
Po-Chih Chen, Wen-Chien Miao, Tanveer Ahmed, Yi-Yu Pan, Chun-Liang Lin, Shih-Chen Chen, Hao-Chung Kuo, Bing-Yue Tsui, Der-Hsien Lien
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-17 (2022)
Abstract With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the perform
Externí odkaz:
https://doaj.org/article/a5a71dff56c440c9b3b5e4df2900a4d5
Autor:
Wei He, Jian Li, Zeliang Liao, Feng Lin, Junye Wu, Bing Wang, Maojun Wang, Nan Liu, Hsien-Chin Chiu, Hao-Chung Kuo, Xinnan Lin, Jingbo Li, Xinke Liu
Publikováno v:
Nanoscale Research Letters, Vol 17, Iss 1, Pp 1-10 (2022)
Abstract In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit
Externí odkaz:
https://doaj.org/article/9ab735ceb4b144938449415f38e2892d
Autor:
Yi-Yang Li, Fang-Zhong Lin, Kuo-Lin Chi, Shao-Yi Weng, Guan-Ying Lee, Hao-Chung Kuo, Chien-Chung Lin
Publikováno v:
IEEE Photonics Journal, Vol 14, Iss 1, Pp 1-7 (2022)
This study fabricated and analyzed AlGaInP-based red micro–light-emitting diodes (LEDs) ranging from 2 to 15 μm in size. To collect photons from a single micro-LED at this scale, a solar cell chip near the micro-LEDs was used. Quantum efficiency d
Externí odkaz:
https://doaj.org/article/f4da32baef0b4a29adb4b2d9857f80c5
Autor:
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor dep
Externí odkaz:
https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2