Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Hao‐Xuan Zheng"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The heat dissipation optimization process is a crucial element in high power high electron mobility transistor (HEMT) components fabricated using the Gallium Nitride grown on silicon (Si) substrate. In this study, the Si substrate is thinned
Externí odkaz:
https://doaj.org/article/b0d353cd26684ead9926d63917b2dc51
Autor:
Yu-Chiang Hung, Wen-Chung Chen, Ting-Chang Chang, Hao-Xuan Zheng, Yan-Wen Liu, Yung-Fang Tan, Shih-Kai Lin, Ying-Hsin Lu, Wen-Long Hu, Tsung-Ming Tsai
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-6 (2020)
Abstract Acupuncture and its meridians are important components of traditional Chinese medicine, and numerous opinions have been previously expressed regarding these meridians. This study aims to explore the phenomenon of meridians from the perspecti
Externí odkaz:
https://doaj.org/article/460355edd05d40458e583cf3721f66cd
Autor:
Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable devi
Externí odkaz:
https://doaj.org/article/d8be428f694a44b7840cf47aa61fd96f
Autor:
Wei-cheng Zheng, Wei-cheng Xu, Hao Zhang, Hao-xuan Zheng, Lin Wang, Zheng-ming Cheng, Yan-fei Ye, Jun Lin, Hong-ming Long
Publikováno v:
Journal of Iron and Steel Research International. 30:708-716
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee3eb35fd6d9f67230ae4730aef8d73f
https://doi.org/10.1007/s42243-022-00843-y
https://doi.org/10.1007/s42243-022-00843-y
Autor:
Wei-Chen Huang, Po-Hsun Chen, Ting-Chang Chang, Hao-Xuan Zheng, Yu-Hsuan Yeh, Chung-Wei Wu, Yung-Fang Tan, Shih-Kai Lin, Pei-Yu Wu, Simon. M. Sze
Publikováno v:
IEEE Transactions on Electron Devices. 69:1811-1815
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c083c1786b209a28ae46ade296ad772
https://doi.org/10.1109/ted.2022.3150285
https://doi.org/10.1109/ted.2022.3150285
Autor:
Ying-Hsin Lu, Ting-Chang Chang, Yu-Chiang Hung, Ting-Hao Wang, Yi-Ting Tseng, Ming-Hui Wang, Hao-Xuan Zheng, Wen-Long Hu, Chih-Cheng Shih
Publikováno v:
Biomedical Journal. 44:S267-S274
While acupuncture has been used for thousands of years, modern technology to develop new needle materials has rarely been discussed. We aim to explore a new acupuncture needle material and compare the differences in the needling sensations between th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1392eef725f87129722c57c2362c1580
https://doi.org/10.1016/j.bj.2020.11.010
https://doi.org/10.1016/j.bj.2020.11.010
Autor:
Yun-Hsuan Lin, Jen-Wei Huang, Hong-Yi Tu, Pei-Yu Wu, Mao-Chou Tai, Yu-Ching Tsao, Yu-Shan Lin, Ya-Ting Chien, Ting-Chang Chang, Fong-Min Ciou, Hao-Xuan Zheng, Fu-Yuan Jin, Yu-Lin Tsai
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:320-323
In this work, three MISHEMT devices with different electric-field-dispersion layer (EDL) behave the same pristine electrical properties. EDL, which is low dielectric constant (low-k), can effectively disperse electric field, which enhances breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ba13d68060e7c8a255b997d2a34891
https://doi.org/10.1109/tdmr.2021.3086515
https://doi.org/10.1109/tdmr.2021.3086515
Autor:
Hao-Xuan Zheng, Shih-Kai Lin, Chih-Cheng Yang, Pei-Yu Wu, Po-Hsun Chen, Wen-Chung Chen, Hui-Chun Huang, Yong-Ci Zhang, Min-Chen Chen, Ting-Chang Chang, Simon M. Sze, Tsung-Ming Tsai, Jian-Jie Chen
Publikováno v:
IEEE Transactions on Electron Devices. 68:541-544
This research investigates one of the process or element doping methods used to enhance the reliability of resistive random access memory (RRAM). A supercritical fluid process combines the advantages of the high permeability of gas with the solubilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1996ae3ba9cbf4f97446cfdcc7a60d3
https://doi.org/10.1109/ted.2020.3043209
https://doi.org/10.1109/ted.2020.3043209
Autor:
Wei-Jang Chen, Pei-Yu Wu, Chih-Cheng Yang, Tsung-Ming Tsai, Xiaohua Ma, Yung-Fang Tan, Simon M. Sze, Ting-Chang Chang, Yue Hao, Wen-Chung Chen, Hao-Xuan Zheng, Chih-Cheng Shih, Mao-Chou Tai, Hui-Chun Huang
Publikováno v:
IEEE Electron Device Letters. 41:357-360
In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5c03ef950a757b0413e4af9da42fe9
https://doi.org/10.1109/led.2020.2968629
https://doi.org/10.1109/led.2020.2968629
Publikováno v:
IEEE Transactions on Electron Devices. 67:1293-1296
In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb3c35dfe727056abe21e43b8533681a
https://doi.org/10.1109/ted.2020.2967401
https://doi.org/10.1109/ted.2020.2967401