Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hansu Oh"'
A V2X Access Authorization Mechanism based on Decentralized ID (DID) and Verifiable Credentials (VC)
Publikováno v:
2023 International Conference on Information Networking (ICOIN).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79c9c2783d567a3e0c8ab53a7e039d07
https://doi.org/10.1109/icoin56518.2023.10048986
https://doi.org/10.1109/icoin56518.2023.10048986
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e887188c97b187193659e913526359a3
https://doi.org/10.1109/cstic55103.2022.9856801
https://doi.org/10.1109/cstic55103.2022.9856801
Autor:
Joo-Hyun Jeong, Hansu Oh, Kang-Wook Park, Jedon Kim, Jaehoon Park, Jin Hyoun Joe, Jinsung Lim, Han-Su Kim, Jong Shik Yoon, Chulho Chung
Publikováno v:
IEEE Transactions on Electron Devices. 55:2712-2717
Effects of parasitic capacitance, external resistance, and local stress on the radio-frequency (RF) performance of the transistors fabricated by 65-nm CMOS technology have been investigated. The effect of parasitic capacitance, particularly Cgb, beco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71c290fc9f4211d09e419442e317f98
https://doi.org/10.1109/ted.2008.2003995
https://doi.org/10.1109/ted.2008.2003995
Publikováno v:
IEEE Electron Device Letters. 30:1099-1101
Transistor scaling with the CMOS technology advancement results in f max saturation in contrast to fT improvement. Effective improvement methods for such saturated f max are presented to the transistors fabricated by 45- and 65-nm low standby power C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2137f9ef4613b8cc68562e432df0e1fd
https://doi.org/10.1109/led.2009.2029131
https://doi.org/10.1109/led.2009.2029131
Publikováno v:
IEEE Electron Device Letters. 30:1105-1107
Transistor scaling with CMOS technology evolution results in f max saturation in contrast to fT improvement. This letter presents effective improvement methods for such saturated f max in the transistors fabricated by 45-nm low-standby-power CMOS tec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b75c8c009ed9a09e4f81a2e9e21cb4
https://doi.org/10.1109/led.2009.2029128
https://doi.org/10.1109/led.2009.2029128
Publikováno v:
IEEE Electron Device Letters. 30:855-857
The fluctuation of RF performance (particularly for fT: cutoff frequency) in the transistors fabricated by 90-nm CMOS technology has been investigated. The modeling for fT fluctuation is well fitted with the measurement data within approximately 1% e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::284b8984776d59d5b0dc37b78aa40f91
https://doi.org/10.1109/led.2009.2023826
https://doi.org/10.1109/led.2009.2023826
Autor:
In Man Kang, Hyun-Woo Lee, Han-Su Kim, Seung-jae Jung, Kyu-Myung Choi, Jae-Hong Jung, Gwangdoo Jo, Kang-Wook Park, Han-Gu Kim, Young-Kwang Kim, Chulho Chung, Hansu Oh, Tae-Hoon Choi
Publikováno v:
IEEE Electron Device Letters. 30:538-540
A radio-frequency equivalent circuit model for the symmetric vertical natural capacitor (VNCAP) in a 45 nm low-standby-power CMOS process is presented. The average effective capacitance density of 2.24 fF/ mum2 is obtained from VNCAPs of 1 times (M1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0592bce042077e202831258227b0caca
https://doi.org/10.1109/led.2009.2015781
https://doi.org/10.1109/led.2009.2015781
Autor:
In Man Kang, Kyu-Myung Choi, Hyun-Woo Lee, Han-Gu Kim, Young-Kwang Kim, Hansu Oh, Tae-Hoon Choi, Seung-jae Jung, Chulho Chung, Gwangdoo Jo, Han-Su Kim, Jae-Hong Jung
Publikováno v:
IEEE Electron Device Letters. 30:398-400
We present the method for five-step (pad-pad short-pad open-short-open) on-chip parasitic de-embedding. Its validation is verified by gate electrode resistance and input capacitance of transistors based on 45 -nm CMOS process. Optimized dummy structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc79eea69aed6a82456df5850c967ce
https://doi.org/10.1109/led.2009.2013881
https://doi.org/10.1109/led.2009.2013881
Autor:
Hansu Oh, Jinsung Lim, Jedon Kim, Chulho Chung, Seung-jae Jung, Han-Su Kim, Joo-Hyun Jeong, Gwangdoo Jo, Jaehoon Park, Jong Shik Yoon, Hyun-Woo Lee, Kang-Wook Park, JinHyoun Joe
Publikováno v:
2008 IEEE Radio Frequency Integrated Circuits Symposium.
Cut-off frequency (fT) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H21) and noise (flicker and thermal) is improved with scaling down
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d8a430f6c64bbccf4107d441af38a90
https://doi.org/10.1109/rfic.2008.4561498
https://doi.org/10.1109/rfic.2008.4561498
Autor:
Hyun-Woo Lee, Young-Jin Kim, Chulho Chung, E. S. Jung, Joo-Hyun Jjeong, Seok-Hee Hwang, Kwang-Pyuk Suh, Kyushik Hong, Jedon Kim, Hansu Oh, In-Chul Hwang
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2006.
We report a high performance NPN bipolar junction transistor (BJT) processed in standard CMOS process that is applied to realize the direct conversion GSM receiver and DVB-H tuner. Through the variation of the base doping profile, performance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3733519994ceaaf11b9cd3b86d76e47d
https://doi.org/10.1109/rfic.2006.1651191
https://doi.org/10.1109/rfic.2006.1651191