Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Hans-Peter Felsl"'
Autor:
H.-J. Schulze, Franz Josef Niedernostheide, Philip Christoph Brandt, Andre Rainer Stegner, Wolfgang Wagner, Frank Umbach, Christian Philipp Sandow, Hans-Peter Felsl, F. Pfirsch, F. Santos
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The continued shrinking of IGBT chips calls for new design approaches to ensure reliable and stable switching operation during the chip lifetime. We demonstrate a new asymmetric gate oxide concept with a designed variable thickness that leads to stab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63efafa71c5ab018f87d5a47de328d28
https://doi.org/10.1109/ispsd.2018.8393593
https://doi.org/10.1109/ispsd.2018.8393593
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
The doping profile of the field-stop zone influences the static characteristics (V ce, sat , V br ) and the dynamic switching characteristics (di c /dt, dV CE /dt, softness) of IGBTs. Furthermore, the short-circuit ruggedness is strongly influenced b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7fba5ae5fa28478c1915990bdf5ec6f
https://doi.org/10.23919/ispsd.2017.7988931
https://doi.org/10.23919/ispsd.2017.7988931
Autor:
Hans-Joachim Schulze, Franz-Josef Niedernostheide, Roman Baburske, Hans Peter Felsl, Josef Lutz, Manfred Pfaffenlehner, Thomas Basler, Frank Pfirsch
Publikováno v:
IET Circuits, Devices & Systems. 8:205-212
The surge-current ruggedness of free-wheeling diodes can be improved by implementing the self-adjusting p emitter efficiency diode concept (SPEED). Simulations indicate that the switching ruggedness is reduced because of the occurrence of cathode-sid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27bc3a65e6b72e872f215ba6e5c44827
https://doi.org/10.1049/iet-cds.2013.0216
https://doi.org/10.1049/iet-cds.2013.0216
Autor:
Alexander Breymesser, Naveen Ganagona, Andreas Schulz, Alexander Susiti, Andre Schwagmann, Werner Schustereder, Franz Josef Niedernostheide, H.-J. Schulze, T. Kurz, T. Wübben, M. Stadtmuller, Moriz Jelinek, Stephan Voss, Johannes Georg Laven, Hans-Peter Felsl, Helmut Öfner, Florian Lükermann
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
As in other semiconductor industries, there is a strong trend to use larger wafer diameters for the fabrication of power devices. However, for wafer diameters above 200 mm float-zone (FZ) silicon which is traditionally used for IGBTs is not available
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd16773e8063412a36e14e2c4ce0467
https://doi.org/10.1109/ispsd.2016.7520851
https://doi.org/10.1109/ispsd.2016.7520851
Autor:
H.-J. Schulze, Werner Schustereder, Hans-Joachim Schulze, Franz Josef Niedernostheide, Frank Hille, Carsten Schäffer, Manfred Pfaffenlehner, Hans-Peter Felsl, Johannes Georg Laven
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Hydrogen-related donors can be formed by using only a moderate thermal budget, so that this process can be used to create field-stop layers in thin power devices. The electrical characteristics of 1200 V IGBTs and diodes provided with such field-stop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee1a04d0b03c64368d0a98c037ef827
https://doi.org/10.1109/ispsd.2016.7520850
https://doi.org/10.1109/ispsd.2016.7520850
Autor:
H.-J. Schulze, Josef Lutz, Roman Baburske, Hans-Peter Felsl, Martin Domeij, B. Heinze, Min Chen
Publikováno v:
IEEE Transactions on Electron Devices. 56:2825-2832
The effects during reverse recovery of pin power diodes are determined by free carriers and their interaction with the electric field. A density of free carriers higher than the background doping will easily occur in space-charge regions during rever
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba7901cb0d041839f1b9a66ed8eb6edb
https://doi.org/10.1109/ted.2009.2031019
https://doi.org/10.1109/ted.2009.2031019
Publikováno v:
Microelectronics Journal. 39:857-867
The influence of small doping inhomogeneities on the behavior of current filaments appearing in p^+-n^--n^+ diodes during the reverse-recovery period under extreme turn-off conditions is investigated. It is shown that depending on the strength and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52477968774f7bdabfe497d7b1c6dc0
https://doi.org/10.1016/j.mejo.2007.11.004
https://doi.org/10.1016/j.mejo.2007.11.004
Publikováno v:
Microelectronics Journal. 39:868-877
Buffer structures and edge termination have a decisive influence on the static and dynamic characteristics of free-wheeling diodes. In this paper the influence of buffer structures at the cathode side, the influence of the design of the edge terminat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59eaded9033e3f0661f4c8289dce4526
https://doi.org/10.1016/j.mejo.2007.11.023
https://doi.org/10.1016/j.mejo.2007.11.023
Autor:
Stanislav Popelka, Eric Pertermann, Rc Sharma, Franz-Josef Niedernostheide, Hans Peter Felsl, Pavel Hazdra, Josef Lutz, Hans-Joachim Schulze
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
We show that the technique of Frequency Resolved Admittance Spectroscopy (FRAS) allows the identification of deep traps with reduced measurement effort compared to Deep Level Transient Spectroscopy (DLTS). This is shown by the analysis of radiation d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da19f1a69443a4e7e3c9210b0782e8ec
https://doi.org/10.1109/epe.2015.7311785
https://doi.org/10.1109/epe.2015.7311785
Autor:
Maria Cotorogea, Roman Baburske, Franz Josef Niedernostheide, Christian Philipp Sandow, Hans-Peter Felsl, V. van Treek
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We present experimental data and simulation methods concerning the destruction of Insulated Gate Bipolar Transistors (IGBTs) during inductive turn-off when dynamic avalanche occurs. The influence of cell pitch and gate resistor on destruction is expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4d02f49755116106daf397fa99467e
https://doi.org/10.1109/ispsd.2015.7123398
https://doi.org/10.1109/ispsd.2015.7123398