Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hans-Olof Blom"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:217-223
The mechanism for ion-enhanced chemical etching of hafnium aluminate thin films in Cl2/BCl3 plasmas was investigated in this work, specifically how the film composition, ion energy, and plasma chemistry determine their etch rates. Several composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddae00e45a68d5e7621dda54850bee63
https://doi.org/10.1116/1.3065695
https://doi.org/10.1116/1.3065695
Autor:
Yuanbing Mao, Bruce Dunn, Jun Lu, Hans-Olof Blom, Jane P. Chang, Jiurong Liu, Diosdado Rey Banatao, Todd O. Yeates, Esther H. Lan, G. Jason Forse
Publikováno v:
Journal of the American Chemical Society. 130:16908-16913
We report an effective method to fabricate two-dimensional (2D) periodic oxide nanopatterns using S-layer proteins as a template. Specifically, S-layer proteins with a unit cell dimension of 20 nm were reassembled on silicon substrate to form 2D arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33f1d274326967aebd1a1f80f0cd85e2
https://doi.org/10.1021/ja803186e
https://doi.org/10.1021/ja803186e
Publikováno v:
Scopus-Elsevier
In the fabrication of microstructures in SiO2, etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3ac968c55fd67a69f4aa26a0b8d3bb3
https://doi.org/10.1116/1.581534
https://doi.org/10.1116/1.581534
Autor:
Sören Berg, V B Taranov, K P Shamrai, Lars Jonsson, V F Virko, Hans-Olof Blom, Christer Hedlund, V P Pavlenko
Publikováno v:
Scopus-Elsevier
We study experimentally and theoretically stable regimes and discharge disruptions in a helicon plasma source. At fixed input power and gas pressure, stable operation of the source is possible below some critical value of magnetic field Bcr. The plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0eb7a88e228645d0c13a68b575dfb310
https://doi.org/10.1116/1.580841
https://doi.org/10.1116/1.580841
Publikováno v:
Scopus-Elsevier
The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6 and Cl2 is determined using a recently developed direct measurement method. The latter utilizes specia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9026784066e7e89b30ab1b9f711b9a45
https://doi.org/10.1116/1.580802
https://doi.org/10.1116/1.580802
Publikováno v:
Vacuum. 46:971-975
A true 3D computer program, named DINESE, has been developed to simulate the evolution of real 3D structures during erosion and deposition. It is based on the generalized Huygens reconstruction formalism of surface evolution and can predict the evolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdc3aff33e0c5723427f886686cfcc6e
https://doi.org/10.1016/0042-207x(95)00085-2
https://doi.org/10.1016/0042-207x(95)00085-2
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1542-1546
It has been shown that at elevated temperatures silicon is preferentially sputtered from Ti and Co silicides during low energy Ar ion bombardment. The Si sputtering yield under these conditions is shown to substantially exceed that of pure Si, as wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c66b30ac184e9a735a7664055c124c
https://doi.org/10.1116/1.579352
https://doi.org/10.1116/1.579352
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1962-1965
The etch rate of silicon, during reactive ion etching (RIE), depends on the total exposed area. This is called the loading effect. However, local variations in the pattern density will, in a similar way, cause local variations in the etch rate. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c07f8dd7abc4fdcdb0dd08a5f338ac54
https://doi.org/10.1116/1.578990
https://doi.org/10.1116/1.578990
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:61-68
A concise review of the basic ideas of the generalized kinematic model of surface evolution during growth and erosion is presented. Interpretation of the main results of this model as well as some specific rules and advice as to how this model is app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401846f6d70f45b48b8850127eab0a9c
https://doi.org/10.1116/1.578859
https://doi.org/10.1116/1.578859
Autor:
AM Barklund, Hans-Olof Blom
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1226-1229
Results from etching experiments where Si3N4 films have been bombarded by argon ions at different angles of incidence, with or without a simultaneous exposure to XeF2 molecules, are presented. The experiments have been performed using a Kaufman‐typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d9c5c090e7b72c37cf79f75f89fbd84
https://doi.org/10.1116/1.578497
https://doi.org/10.1116/1.578497