Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Hans-Juergen Brueck"'
Publikováno v:
SPIE Proceedings.
During the development of process generations with critical dimensions (CDs) around or even far below the wavelength used for printing, the wafer exposure step has become more and more complicated due to the non-linearities that occur within this sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8df96695ca3877c886fcff96989176b
https://doi.org/10.1117/12.467755
https://doi.org/10.1117/12.467755
Autor:
Parkson W. Chen, Hans-Juergen Brueck, Christian Gittinger, Stefan Doebereiner, Gerd Scheuring, Anthony Grimshaw, Thomas Schaetz, Vicky Philipsen, Kai Peter, Shiuh-Bin Chen, Andrew C. Hourd, Hans Hartmann, Frank Hillmann, Volodymyr Ordynskyy, Karl Sommer, Rik Jonckheere
Publikováno v:
SPIE Proceedings.
The new MueTec , an advanced CD metrology and review station operating at DUV (248nm) wavelength, has been extensively characterised in a reticle production environment. Performance data including resolution, measurement repeatability and throughput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efafe10fad0b339e1112991d3e60b5f7
https://doi.org/10.1117/12.468090
https://doi.org/10.1117/12.468090
Autor:
Christian Gittinger, Parkson W. Chen, Hans-Juergen Brueck, Anthony Grimshaw, Andrew C. Hourd, Hans Hartmann, Thomas Schaetz, Rik Jonckheere, Gerd Scheuring, Shiuh-Bin Chen, Volodymyr Ordynskyy, Karl Sommer, Vicky Philipsen
Publikováno v:
SPIE Proceedings.
Critical Dimension fidelity continues to be one of the key driving parameters defining photomask quality and printing performance. The present advanced optical CD metrology systems, operating at i-line, will very soon be challenged as viable tools ow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05462b3013b452e80e85abf21068d589
https://doi.org/10.1117/12.479349
https://doi.org/10.1117/12.479349
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
TO enable lithography at low k1 factors, OPC on photo masks is a method of strong and growing importance. But CD metrology of OPC features is suffering form several drawbacks: (1) OPC structures often do not have two parallel edges, which are require
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa47044cbd0eb4bcc1db3153e77d1fe
https://doi.org/10.1117/12.458298
https://doi.org/10.1117/12.458298
Publikováno v:
SPIE Proceedings.
We report on comparison measurements for linewidths of test structures on chrome on glass photomasks by means of different types of light optical transmission microscopy and low voltage scanning electron microscopy (LVSEM). The investigated linewidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa7a721da99ec4e6aaa0f05c5db5fe73
https://doi.org/10.1117/12.425082
https://doi.org/10.1117/12.425082
Autor:
Karl Sommer, Yair Eran, Thomas Schaetz, Volodymyr Ordynskyy, Thomas Engel, Emanuele Baracchi, Gerald Galan, Corinne Miramond, Martin Verbeek, Roman Liebe, Hans Hartmann, Kai Peter, Hans-Juergen Brueck, Gerd Scheuring
Publikováno v:
SPIE Proceedings.
The reduction of wavelength in optical lithography and the use of enhancement techniques like phase shift technology, optical proximity correction (OPC), or off-axis illumination, lead to new specifications for advanced photomasks: a challenge for co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53fda25805a5bf81d1a71e5c7c1acac6
https://doi.org/10.1117/12.425084
https://doi.org/10.1117/12.425084
Publikováno v:
SPIE Proceedings.
To keep pace with continuous shrinking design rules for masks and reticles a new 248 nm CD measurement system has been developed. The step to a shorter illumination wavelength leads to a better optical resolution power resulting in an improved CD lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09f33828db2b0bb6f8df0936258a896
https://doi.org/10.1117/12.425077
https://doi.org/10.1117/12.425077
Autor:
Hans Hartmann, Hans-Juergen Brueck, Thomas Engel, Karl Sommer, Yair Eran, Olivier Maurin, Gerd Scheuring, Emanuele Baracchi, Kai Peter, Thomas Schaetz, Corinne Miramond, Frederic P. Lalanne
Publikováno v:
SPIE Proceedings.
The reduction of wavelength in optical lithography, phase shift technology and optical proximity correction (OPC), requires a rapid increase in cost effective qualification of photomasks. The knowledge about CD variation, loss of pattern fidelity esp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e585ba20eb002863922b50d89f5e1cb
https://doi.org/10.1117/12.392088
https://doi.org/10.1117/12.392088
Autor:
Thomas Schaetz, Guenther Falk, Gerhard W.B. Schlueter, Sigrid Lehnigk, Hans-Juergen Brueck, Gerd Scheuring
Publikováno v:
SPIE Proceedings.
With continuously shrinking design rules enhanced techniques are required in mask manufacture which requires more sophisticated procedures for their characterization. As Phase Shift Masks (PSM) are of growing importance a new CD algorithm had to be d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59454df967bd4f39f77cbe21db32fd3a
https://doi.org/10.1117/12.377103
https://doi.org/10.1117/12.377103
Publikováno v:
SPIE Proceedings.
The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93189a814d3416fb47f9b15510a6170
https://doi.org/10.1117/12.377100
https://doi.org/10.1117/12.377100