Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Hans-Jürgen Stock"'
Autor:
Lawrence S. Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary A. Levinson, Hans-Jürgen Stock, Ulrich Welling
Publikováno v:
DTCO and Computational Patterning II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5351dc5f03f84147fe7aba90f81a0550
https://doi.org/10.1117/12.2658780
https://doi.org/10.1117/12.2658780
Autor:
Jürgen Preuninger, Ulrich Klostermann, Jongsu Kim, Hans-Jürgen Stock, Ulrich Welling, Sang-Yil Chang, Hyungju Ryu, Kyoung-sub Shin, Wolfgang Demmerle, Eunsoo Jeong, Hyekyoung Jue, Joon-Soo Park, Jung-Hoe Choi, Sang-Jin Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
For the past years, ArF immersion has been employed as the major lithography tool in the foundry manufacturing to fabricate the patterns of minimum pitch and size. However, for semiconductor scaling beyond N7 the application of EUV lithography is con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab0c4bfe75ff6b348a87b2afdefcea26
https://doi.org/10.1117/12.2553319
https://doi.org/10.1117/12.2553319
Autor:
Yoshihiro Kondo, Cong Que Dinh, Philippe Foubert, John S. Petersen, Danilo De Simone, Balint Meliorisz, Seiji Nagahara, Geert Vandenberghe, Gosuke Shiraishi, Keisuke Yoshida, Kosuke Yoshihara, Kathleen Nafus, Hans-Jürgen Stock
Publikováno v:
Advances in Patterning Materials and Processes XXXVII.
Flood Exposure Assisted Chemical Gradient Enhancement Technology (FACET) is introduced for improvement in EUV resist resolution, process control, roughness, patterning failure and sensitivity. Experimental EUV exposure latitude was enhanced (~1.5 tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8728e1923c05a4caaedeedba43613acd
https://doi.org/10.1117/12.2552166
https://doi.org/10.1117/12.2552166
Autor:
Jiuzhou Tang, Erik A. Verduijn, Hans-Jürgen Stock, Ulrich Welling, Wolfgang Demmerle, Peter De Bisschop, Ulrich Klostermann
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Stochastic defects are a concern in the lithographic processes used for semiconductor manufacturing, particularly for advanced node extreme ultraviolet lithographic processes. Experimentally determining the defect probability for a lithographic proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a27a49dc980ada1ccea8d3bc4659a4
https://doi.org/10.1117/12.2552236
https://doi.org/10.1117/12.2552236
Autor:
Shimon Levi, Matan Tobayas, Sean Hand, Angela Karvtsov, Thomas Muelders, Ishai Schwarzband, Hans-Jürgen Stock, Jason R. Osborne
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIII.
Optical Proximity Correction (OPC) modeling has evolved throughout the years to address 2D edge placement corrections, driven mainly out of CDSEM measurement results. 3D pattern modeling, and 3D-OPC for resist pattern, is much more complex. 3D inform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e50e2df5dbcdf2ce959a1770ac0209db
https://doi.org/10.1117/12.2514666
https://doi.org/10.1117/12.2514666
Autor:
Hideo Nakashima, Yuichi Yoshida, John S. Petersen, Cong Que Dinh, Balint Meliorisz, Geert Vandenberghe, Philippe Foubert, Kosuke Yoshihara, Kathleen Nafus, Hans-Jürgen Stock, Masaru Tomono, Yuya Kamei, Seiji Nagahara, Michael A. Carcasi, Ryo Shimada, Yoshihiro Kondo, Danilo De Simone, Yukie Minekawa, Peter De Bisschop, Gosuke Shiraishi, Hiroyuki Ide, Serge Biesemans, Kazuhiro Takeshita
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
Resist Formulation Optimizer (RFO) is created to optimize resist formulation under EUV stochastic effects. Photosensitized Chemically Amplified ResistTM (PSCARTM) 2.0 reaction steps are included in the resist reaction model in RFO in addition to stan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776e5b3630c27003585fd3828bf3be
https://doi.org/10.1117/12.2515187
https://doi.org/10.1117/12.2515187
Autor:
Hans-Jürgen Stock, Yuya Kamei, Serge Biesemans, Yoshihiro Kondo, Hiroyuki Ide, Ryo Shimada, Yukie Minekawa, Philippe Foubert, Kazuhiro Takeshita, Kosuke Yoshihara, Kathleen Nafus, Geert Vandenberghe, Michael A. Carcasi, Yuichi Yoshida, Peter De Bisschop, Masaru Tomono, Gousuke Shiraishi, Seiji Nagahara, John S. Petersen, Balint Meliorisz, Danilo De Simone, Teruhiko Moriya, Cong Que Dinh
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X.
Photosensitized Chemically Amplified ResistTM (PSCARTM) has been demonstrated as a promising solution for a high sensitivity resist in EUV lithography mass production. This paper describes the successful calibration of a PSCAR resist model for deploy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab3e0be5e2bcdf438557b4eafbf7d425
https://doi.org/10.1117/12.2515183
https://doi.org/10.1117/12.2515183
Autor:
Thomas Muelders, Chi-Chun Liu, Derren N. Dunn, Jing Guo, Jaime D. Morillo, Kafai Lai, Wolfgang Demmerle, Cheng Chi, Hans-Jürgen Stock, Jing Sha, Balint Meliorisz, Ulrich Welling, Sajan Marokkey, Clifford Osborn
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
This paper presents a design and technology co-optimization (DTCO) study of metal cut formation in the sub-20-nmregime. We propose to form the cuts by applying grapho-epitaxial directed self-assembly. The construction of a DTCO flow is explained and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ddd43a17936e0b25316dc3c05976ee
https://doi.org/10.1117/12.2297344
https://doi.org/10.1117/12.2297344
Autor:
Akihiro Oshima, Seiichi Tagawa, Hiroyuki Ide, Serge Biesemans, Kosuke Yoshihara, Yoshitaka Konishi, Danilo De Simone, Masafumi Hori, Teruhiko Moriya, Hayakawa Makoto, Hans-Jürgen Stock, Yuya Kamei, Kathleen Nafus, Ryo Aizawa, Ken Maruyama, Takahiro Shiozawa, Yoshihiro Kondo, Motoyuki Shima, Kazuhiro Takeshita, Michael A. Carcasi, Masashi Enomoto, Toru Kimura, Yukie Minekawa, Tomoki Nagai, Gosuke Shiraishi, Hideo Nakashima, Masayuki Miyake, Hisashi Nakagawa, Geert Vandenberghe, Keisuke Yoshida, Masaru Tomono, John S. Petersen, Balint Meliorisz, Takehiko Naruoka, Ryo Shimada, Seiji Nagahara, Satoshi Dei, Foubert Philippe
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Photosensitized Chemically Amplified ResistTM (PSCARTM) **2.0’s advantages and expectations are reviewed in this paper. Alpha PSCAR in-line UV exposure system (“Litho Enhancer”) was newly installed at imec in a Tokyo Electron Ltd. (TELTM)’s C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824dfca6e19a82aae0a388d175fc1216
https://doi.org/10.1117/12.2297498
https://doi.org/10.1117/12.2297498
Autor:
Hans-Jürgen Stock, Ulrich Welling, Wolfgang Demmerle, Thomas Muelders, Chi-Chun Liu, Sajan Marokkey, Balint Meliorisz, Jing Guo, Cheng Chi, Kafai Lai
Publikováno v:
SPIE Proceedings.
Direct Optimization (DO) of a 3D DSA model is a more optimal approach to a DTCO study in terms of accuracy and speed compared to a Cahn Hilliard Equation solver. DO’s shorter run time (10X to 100X faster) and linear scaling makes it scalable to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4a06f49a98a725ed3bac6599599336
https://doi.org/10.1117/12.2260379
https://doi.org/10.1117/12.2260379