Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hans-Heinrich Viehmann"'
Autor:
E. Gow, K. Maloney, Andre Sturm, Malissa J. Wood, J. DeBrosse, W. Obermeyer, C. Barwin, William J. Gallagher, Heinz Hoenigschmid, Gerhard Mueller, A.R. Sitaram, D. Willmott, Stefan Lammers, Hans-Heinrich Viehmann, Thomas M. Maffitt, C. Arndt, D. Gogl, Mark C. H. Lamorey, Yu Lu, A. Bette
Publikováno v:
IEEE Journal of Solid-State Circuits. 40:902-908
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5038456bec413d62e3b72e9fea64a323
https://doi.org/10.1109/jssc.2004.842856
https://doi.org/10.1109/jssc.2004.842856
Autor:
Stefan Lammers, Gerhard Müller, R. P. Robertazzi, W. Obermaier, William J. Gallagher, William Robert Reohr, Hans-Heinrich Viehmann, Daniel Braun, C. Arndt, D. Gogl, J. DeBrosse, A. Bette, Heinz Hoenigschmid, R.P. Havreluk, D. Casarotto
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:678-683
A 128-kb magnetic random access memory (MRAM) test chip has been fabricated utilizing, for the first time, a 0.18-/spl mu/m V/sub DD/=1.8 V logic process technology with Cu metallization. The presented design uses a 1.4-/spl mu/m/sup 2/ one-transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb66c10fa56dc4f37d6218a1498ecf12
https://doi.org/10.1109/jssc.2004.825251
https://doi.org/10.1109/jssc.2004.825251
Autor:
Dietmar Essex Junction Gogl, William Robert Reohr, Yu Lu, Stuart S. P. Parkin, F. Pesavento, William J. Gallagher, G. Muller, C. Arndt, R. Robertazzi, K. Lewis, Hans-Heinrich Viehmann, H. Honigschmid, Li-Kong Wang, Roy Edwin Scheuerlein, Philip L. Trouilloud, S. Lammers
Publikováno v:
IEEE Circuits and Devices Magazine. 18:17-27
With the promise of nonvolatility, practically infinite write endurance, and short read and write times, magnetic tunnel junction magnetic random access memory could become a future mainstream memory technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c1fb0afe3b9ce6b53313164e0e57106
https://doi.org/10.1109/mcd.2002.1035347
https://doi.org/10.1109/mcd.2002.1035347