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pro vyhledávání: '"Hans vanMeer"'
Autor:
Thorsten Knopp, James F. Buller, Hans vanMeer, Kalyana Kumar, Yuri Apanovich, John Faricelli, James C. Pattison, Bill Gardiol, Greg Constant, Joe Meier, Sean Hannon, Sushant Suryagandh, Kevin Carrejo, Darin Chan, Uwe Hahn, Akif Sultan, A.B. Icel, Rasit O. Topaloglu, Steve F. Hejl, David Wu, Kaveri Mathur, Victor F. Andrade, Larry A. Bair
Publikováno v:
ISQED
Stressors have been used since 90 nm technology to improve device performance to overcome the limitations of scaling. The stressors, including, - CPEN, TPEN, SMT, and e-SiGe to improve NMOS and PMOS drive current exhibit proximity dependence. In addi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::271703b2faeb4e35b5986a54968f212e
https://doi.org/10.1109/isqed.2009.4810335
https://doi.org/10.1109/isqed.2009.4810335
