Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hans van Zwol"'
Autor:
Peter de Jong, Guido Notermans, Hans van Zwol, Željko Mrčarica, Theo Smedes, Ralph Stephan, Dejan Maksimovic
Publikováno v:
Microelectronics Reliability. 50:26-31
Unexpected functional failures were found in the core of an IC, processed in a 65 nm technology with 1.8 nm gate oxide, after Machine Model (MM) testing, although a comprehensive rail-based protection scheme was applied. Failure analysis was performe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1207bffc3bd33123f5a91557bb6492fe
https://doi.org/10.1016/j.microrel.2009.09.010
https://doi.org/10.1016/j.microrel.2009.09.010
Autor:
Marco Berkhout, Hans van Zwol, Alfred Grakist, Henk Boezen, Maarten Jacobus Swanenberg, Piet Wessels, Benno Krabbenborg
Publikováno v:
Solid-State Electronics. 51:195-211
NXP’s family of SOI-based advanced bipolar CMOS DMOS (A-BCD) technologies is presented. The technology is very successful in automotive, audio and power applications. This paper introduces the technology, the device concepts and the applications. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b2223a4bfbad417c6344e973220323e
https://doi.org/10.1016/j.sse.2007.01.019
https://doi.org/10.1016/j.sse.2007.01.019
Autor:
Han Lokker, Michiel van Duuren, Yi Ning Chen, Jochen Garbe, Alessandro Baiano, Daniel Tajari Mofrad, D. Dormans, Jouke Verbree, Kitty van Dijk, Yu Chen, Hans van Zwol, Robert Beurze, R. Verhaar, Bob Schippers, Jed Chiang, Erik van der Vegt
Publikováno v:
2015 IEEE International Memory Workshop (IMW).
2-transistor (2T) cell technology used for embedded non-volatile memory (eNVM) has been scaled down to 40nm node. To enable aggressive cell scaling, the array architecture is modified compared to previous generations and the channel length of cell is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61563e5ae447fd4c98f4292f37615670
https://doi.org/10.1109/imw.2015.7150292
https://doi.org/10.1109/imw.2015.7150292
Conference
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