Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hans Van Meer"'
Autor:
Naushad Variam, Hans van Meer
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Although pitch scaling has slowed down in recent logic CMOS generations, the demand for external and contact resistance reduction has only gone up. This can be understood by the fact that the transistor drive current densities have continued to incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85fc05317050c3d3aa6f777af490c481
https://doi.org/10.23919/iwjt52818.2021.9609347
https://doi.org/10.23919/iwjt52818.2021.9609347
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
This paper investigates the evolution of implant damage during the fabrication of isolation regions below FinFETs. To isolate p-type devices, 240 keV P+ 3.5 x 1013/cm2 and 185 keV P+ 1.5 x 1013/cm2 implants were done into Si fin structures that were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef6f63ff3461a48684fadcd5a5be515f
https://doi.org/10.1109/iit.2018.8807979
https://doi.org/10.1109/iit.2018.8807979
Publikováno v:
2017 17th International Workshop on Junction Technology (IWJT).
The aggressive scaling of semiconductor technologies with each node generates several opportunities for ion implantation solutions to address key scaling challenges (device performance, SCE, leakage, variability, reliability, etc.). Optimization of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c424e9e22b7ee53e7de04f54a496f9c8
https://doi.org/10.23919/iwjt.2017.7966527
https://doi.org/10.23919/iwjt.2017.7966527
Autor:
Mikhail Nagoga, P. Fazan, Kristin De Meyer, Jean-Michel Sallese, Sorin Cristoloveanu, Serguei Okhonin, Hans Van Meer, J. Pontcharra, O. Faynot
Publikováno v:
Solid-State Electronics. 46:1709-1713
The transients in partially depleted (PD) silicon on insulator (SOI) MOSFETs produced with 0.25 and 0.13 μm technologies are studied. The exponential dependence of the switch-on transient time on the reciprocal drain voltage for both P- and N-channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a9d90571ba80d639c26fe73a422da86
https://doi.org/10.1016/s0038-1101(02)00148-x
https://doi.org/10.1016/s0038-1101(02)00148-x
Autor:
Hans Van Meer, Kristin De Meyer
Publikováno v:
Solid-State Electronics. 45:593-598
The short-channel threshold voltage model for fully depleted (FD) silicon-on-insulator (SOI) MOSFETs, based on a quasi-2D approach, has been investigated and extended. The effect of the source/drain fringing fields, which penetrate into the buried ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca49beb5e903f31186a6d6f9ecf47db
https://doi.org/10.1016/s0038-1101(01)00081-8
https://doi.org/10.1016/s0038-1101(01)00081-8
Autor:
Kristin De Meyer, Hans Van Meer
Publikováno v:
Simulation of Semiconductor Processes and Devices 2001 ISBN: 9783709172780
A 2D analytical model for the calculation of the subthreshold slope has been derived for deep-submicron Fully-Depleted SOI MOSFET’s using a Green’s function solution technique. The accuracy of the equations has been verified by a 2D numerical dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46e58d0acc90f6fd7f0d6961954f0ff4
https://doi.org/10.1007/978-3-7091-6244-6_52
https://doi.org/10.1007/978-3-7091-6244-6_52
Autor:
Jin-Ping Han, Takashi Shimizu, Li-Hong Pan, Moritz Voelker, Christophe Bernicot, Franck Arnaud, Anda Mocuta, Knut Stahrenberg, Atsushi Azuma, Manfred Eller, Guoyong Yang, Daniel Jaeger, Haoren Zhuang, Katsura Miyashita, Kenneth Stein, Deleep Nair, Jae Hoo Park, Sabrina Kohler, Masafumi Hamaguchi, Weipeng Li, Kisang Kim, Daniel Chanemougame, Nam Sung Kim, Sadaharu Uchimura, Gen Tsutsui, Christian Wiedholz, Shinich Miyake, Hans van Meer, Jewel Liang, Martin Ostermayr, Jenny Lian, Muhsin Celik, Ricardo Donaton, Kathy Barla, MyungHee Na, Yoshiro Goto, Melanie Sherony, Frank S. Johnson, Richard Wachnik, John Sudijono, Ed Kaste, Ron Sampson, Ja-Hum Ku, An Steegen, Walter Neumueller
Publikováno v:
Japanese Journal of Applied Physics. 50:04DC13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb44d9ad34edcdba753466fee387fd41
https://doi.org/10.7567/jjap.50.04dc13
https://doi.org/10.7567/jjap.50.04dc13
Autor:
Ton van den Brink, Hans van Meerten
Publikováno v:
Utrecht Law Review, Vol 12, Iss 1, Pp 75-85 (2016)
Since the Treaty of Lisbon, the legislative system of the European Union is based on a distinction between legislative acts and non-legislative acts as well as on a distinction between delegation and implementation. This system has brought about seve
Externí odkaz:
https://doaj.org/article/b0abd3f71762410a8685f2a6fb02aee9
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