Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Hans Tuinhout"'
Autor:
Hans Tuinhout, Oliver Dieball
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Autor:
Andries J. Scholten, Gilson Wirth, Thiago H. Both, Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 66:3521-3526
In this paper, we propose a novel compact statistical model for the low-frequency noise (LFN) of MOS devices with halo implants. The compact model is suited for the incorporation in modern models, such as BSIM, PSP, and EKV, and can be used to predic
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS).
This paper uses a high-spatial-resolution test structure and associated high-precision data analysis approach to characterize deterministic and random performance changes of semiconductor devices induced by local mechanical stress variations in plast
Autor:
Jeroen Croon, Gilson Wirth, Thiago H. Both, Adrie Zegers-van Duijnhoven, Hans Tuinhout, Mauricio Banaszeski da Silva, Andries J. Scholten
Publikováno v:
Noise in Nanoscale Semiconductor Devices ISBN: 9783030374990
With the scaling of transistor area and the introduction of high-k materials, the noise corner frequency—i.e., the frequency up to which flicker noise dominates over thermal or shot noise—is increased. This makes low-frequency noise (LFN) the dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6655368f52ccd27177debb3d8464f3b6
https://doi.org/10.1007/978-3-030-37500-3_15
https://doi.org/10.1007/978-3-030-37500-3_15
Autor:
M. Vroubel, Thanh Viet Dinh, L. F. Tiemeijer, M. Raucoules-aime, Hans Tuinhout, P. Grudowski, Ihor Brunets, B. W. C. Hovens, C. Ghidini, Nicole Wils, Guido T. Sasse, S. Dal Toso
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
High-voltage RF active and passive devices, including LDMOS, fringe capacitors, transformers and inductors with good RF performance, are required for building integrated RF power amplifiers at Watt-level in high-performance cost-effective RF front-en
Autor:
Andries J. Scholten, Mauricio Banaszeski da Silva, Gilson Wirth, Adrie Zegers-van Duijnhoven, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 64:3331-3336
In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally uniform doping. The proposed model is suited for modern compact device models, such as PSP, BSIM
Autor:
Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Andries J. Scholten, Hans Tuinhout, Thiago H. Both, Jeroen Croon, Gilson Wirth
Publikováno v:
IEEE Transactions on Electron Devices. 64:2919-2926
A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature. This technique reveals information about the mechanisms behind 1/ ${f}$ noise that is diffi
Publikováno v:
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS).
This paper discusses metal fringe capacitor matching test structures to characterize the impact of layer density disturbances at the edges of capacitor arrays. It is demonstrated that a seemingly minor pattern density disturbance can significantly af
Autor:
Andries J. Scholten, Mauricio Banaszeski da Silva, Adrie Zegers-van Duijnhoven, Gilson Wirth, Hans Tuinhout
Publikováno v:
IEEE Transactions on Electron Devices. 63:3683-3692
In this paper, we develop a statistical model for random telegraph noise (RTN) related low-frequency noise (LFN). With our proposed model, one can calculate the expected value and the variability of the noise as a function of bias and device paramete
Publikováno v:
2018 IEEE International Conference on Microelectronic Test Structures (ICMTS).
This paper presents a set of test structures that revealed a thus far unknown (or at least unreported) CMP-related short-range correlated mismatch fluctuation effect on the matching of backend metal fringe capacitors. It is shown that an apparent deg