Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Hans Loeschner"'
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Publisher’s Note: This video, originally published on 16 August 2019, was withdrawn per author request.
Publikováno v:
Photomask Technology 2018.
This conference presentation, originally published on 10 October 2018, was withdrawn per author request.
Sputter-redeposition method for the fabrication of automatically sealed micro/nanochannel using FIBs
Autor:
Gerhard Hobler, Hans Loeschner, Elmar Platzgummer, Emmerich Bertagnolli, Andreas Steiger, Heung-Bae Kim, Alois Lugstein
Publikováno v:
International Journal of Precision Engineering and Manufacturing. 12:893-898
In this article, we report a new method for micro/nano fluidic channel fabrication by focused ion beams (FIB) utilizing the redeposition flux, or what we will refer to in this paper as SRM (sputter-redeposition method). Sputtered particles are byprod
Autor:
Dominik Treiblmayr, Elmar Platzgummer, Thomas Fromherz, Michael Muehlberger, Elisabeth Lausecker, T. Narzt, Stefan Eder-Kapl, Rainer Schoeftner, R. Miller, Iris Bergmair, Michael Kast, Gerald Kreindl, P. Joechl, Hans Loeschner, M. Boehm, Mustapha Chouiki, Thomas Glinsner
Publikováno v:
Microelectronic Engineering. 88:2070-2073
The use of working stamps for nanoimprint lithography is highly interesting due to a number of reasons. We present results of such a master stamp - working stamp - imprint process where we achieved a resolution of 12.5nm half pitch. To fabricate mast
Autor:
Elmar Platzgummer, Marc A. Verschuuren, Falco C. M. J. M. van Delft, Hans Loeschner, Robert van de Laar
Publikováno v:
Microelectronic Engineering. 87:1062-1065
Recently, the first generation programmable Aperture Plate System with integrated CMOS electronics (CMOS-APS) featuring 43 thousand switchable beams has been inserted into a Charged Particle Nanopatterning (CHARPAN) tool. Using this configuration, th
Publikováno v:
Microelectronic Engineering. 87:1154-1158
Projection Mask-Less Lithography (PML2) is a potentially cost-effective electron multi-beam solution for the 22nm hp technology node and beyond. PML2 is targeted on using hundreds of thousands of individually addressable electron-beams working in par
Autor:
Joerg Schotter, Wolfgang Jantsch, Hans Loeschner, Wolfgang Heiss, Gunther Springholz, Maryna I. Bodnarchuk, Maksym V. Kovalenko, Elmar Platzgummer, Gang Chen
Publikováno v:
Advanced Materials. 22:1364-1368
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2059-2063
Projection maskless patterning (PMLP) is based on a programmable aperture plate system and on charged particle projection optics with 200× reduction, providing thousands of electron or ion (H+, He+, Ar+, Xe+, C60−) beams working in parallel on the
Autor:
Gerhard Gross, Christoph Ebm, Falco C. M. J. M. van Delft, Elmar Platzgummer, Emile Naburgh, Hans Loeschner
Publikováno v:
Microelectronic Engineering. 85:937-941
A projection mask-less patterning (PMLP) proof-of-concept tool, realised as part of the European FP6-NMP integrated project CHARPAN (Charged Particle Nanotech), has been applied for three-dimensional patterning of a GaAs surface, using a stencil mask
Publikováno v:
Surface and Coatings Technology, 201(19-20), 8437-8441. Elsevier
Compared to focused ion beam writing, ion projection lithography is a parallel structuring process which transfers the pattern of an open stencil mask with electrostatic demagnification optics onto the target surface. The parallel structuring process