Zobrazeno 1 - 10
of 590
pro vyhledávání: '"Hans Lüth"'
Autor:
Erik Zimmermann, Michael Schleenvoigt, Alina Rupp, Gerrit Behner, Jan Karthein, Justus Teller, Peter Schüffelgen, Hans Lüth, Detlev Grützmacher, Thomas Schäpers
Publikováno v:
JPhys Materials, Vol 7, Iss 1, p 015015 (2024)
We present a symmetrization routine that optimizes and eases the analysis of imperfect, experimental data featuring the anomalous Hall hysteresis. This technique can be transferred to any hysteresis with (point-)symmetric behavior. The implementation
Externí odkaz:
https://doaj.org/article/71ef9add5cc54a1e842c8336b06ca69f
Autor:
Jonas Kölzer, Kristof Moors, Abdur Rehman Jalil, Erik Zimmermann, Daniel Rosenbach, Lidia Kibkalo, Peter Schüffelgen, Gregor Mussler, Detlev Grützmacher, Thomas L. Schmidt, Hans Lüth, Thomas Schäpers
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
Topological surface states of three-dimensional topological insulators exhibit distinct magnetotransport properties. Here, a steering effect is demonstrated for three-terminal junctions, which is driven by an in-plane magnetic field and makes the jun
Externí odkaz:
https://doaj.org/article/9e7eb06996aa4439ad5a154099d3d144
Autor:
Jinzhong Zhang, Pok-Lam Tse, Abdur-Rehman Jalil, Jonas Kölzer, Daniel Rosenbach, Martina Luysberg, Gregory Panaitov, Hans Lüth, Zhigao Hu, Detlev Grützmacher, Jia Grace Lu, Thomas Schäpers
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
A deep understanding of low-temperature transport properties of GeTe material remains a challenge. Here, the authors investigate phase-coherent phenomena in GeTe nanowire structures where the occurrence of magnetic flux-periodic oscillations come fro
Externí odkaz:
https://doaj.org/article/a3feaa560faf488bb377b978de443326
Autor:
Jonas Kölzer, Abdur Rehman Jalil, Daniel Rosenbach, Lisa Arndt, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 293 (2023)
In this paper, in an in situ prepared three-terminal Josephson junction based on the topological insulator Bi4Te3 and the superconductor Nb the transport properties are studied. The differential resistance maps as a function of two bias currents reve
Externí odkaz:
https://doaj.org/article/1905c91459174fcb9615ece46e870a39
Publikováno v:
SciPost Physics Core, Vol 5, Iss 1, p 017 (2022)
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the p
Externí odkaz:
https://doaj.org/article/9322f3ccd23e4b6badc9bb44ca79bc5e
Autor:
Erik Zimmermann, Jonas Kölzer, Michael Schleenvoigt, Daniel Rosenbach, Gregor Mussler, Peter Schüffelgen, Tristan Heider, Lukasz Plucinski, Jürgen Schubert, Hans Lüth, Detlev Grützmacher, Thomas Schäpers
Publikováno v:
Semiconductor science and technology 38(3), 035010-(2023). doi:10.1088/1361-6641/acb45f
We present low-temperature magnetotransport measurements characterizing the promising quaternary Bi1.5Sb0.5Te1.8Se1.2 topological insulator material. The measurements performed on a nano-Hall bar grown by selective-area molecular beam epitaxy reveale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f042b2fb0c0b6529074816bd31f07cf
https://doi.org/10.1088/1361-6641/acb45f
https://doi.org/10.1088/1361-6641/acb45f
Autor:
Daniel Rosenbach, Kristof Moors, Abdur R. Jalil, Jonas Kölzer, Erik Zimmermann, Jürgen Schubert, Soraya Karimzadah, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers
Publikováno v:
SciPost Physics Core 5(1), 017 (2022). doi:10.21468/SciPostPhysCore.5.1.017
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the peri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63b23b99706f825d4714dabb70e67a1a
http://arxiv.org/abs/2104.03373
http://arxiv.org/abs/2104.03373
Autor:
Thomas Schäpers, Daniel Rosenbach, Martin Mikulics, Hans Lüth, Detlev Grützmacher, Erik Zimmermann, Nico Oellers, Stephany Bunte, Gregor Mussler, Jonas Kölzer, Abdur Rehman Jalil
Publikováno v:
Advanced electronic materials 6(8), 2000205-(2020). doi:10.1002/aelm.202000205
Advanced electronic materials 6(8), 2000205 (2020). doi:10.1002/aelm.202000205
Advanced electronic materials 6(8), 2000205 (2020). doi:10.1002/aelm.202000205
Advanced electronic materials 6(8), 2000205 (2020). doi:10.1002/aelm.202000205
Published by Wiley-VCH Verlag GmbH & Co. KG, Weinheim
Published by Wiley-VCH Verlag GmbH & Co. KG, Weinheim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce50ad76a0e9665fc104991d1ba9caca
https://hdl.handle.net/2128/25621
https://hdl.handle.net/2128/25621
Autor:
Daniel Rosenbach, Lidia Kibkalo, Thomas L. Schmidt, Kristof Moors, Abdur Rehman Jalil, Peter Schüffelgen, Hans Lüth, Gregor Mussler, Detlev Grützmacher, Jonas Kölzer, Thomas Schäpers, Erik Zimmermann
Publikováno v:
Communications materials 2(1), 116 (2021). doi:10.1038/s43246-021-00213-3
Communications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
Communications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanorib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cdb245a88cbab13dc30660c45f0a45a
Autor:
Martin Mikulics, Hans Lüth, A. Fox, Hilde Hardtdegen, Peter Kordos, Zdeněk Sofer, Martin Kocan
Publikováno v:
Applied Materials Today. 7:134-137
In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel “combined” two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d781d0c8d7166f9a9521fe3004151b
https://doi.org/10.1016/j.apmt.2017.02.008
https://doi.org/10.1016/j.apmt.2017.02.008