Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hans Kattouw"'
Autor:
Eelco van Setten, Christian Wagner, Richard Droste, Tilmann Heil, Leon Martin Levasier, Louis Jorritsma, Jos de Klerk, Jowan Jacobs, Hans Kattouw
Publikováno v:
SPIE Proceedings.
Water based immersion lithography is now widely recognized a key enabler for continued device shrinks beyond the limits of classical dry lithography. Since 2004, ASML has shipped multiple TWINSCAN immersion systems to IC manufacturers, which have fac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4d4d10ec6c2987b7b5163b12ddecd2
https://doi.org/10.1117/12.712094
https://doi.org/10.1117/12.712094
Autor:
Staf Verhaegen, Axel Nackaerts, Hans Kattouw, Frank van Bilsen, Serge Biesemans, Mircea Dusa, Geert Vandenberghe
Publikováno v:
SPIE Proceedings.
In this paper the impact of overlay and CD uniformity specifications on device and SRAM cell functional and parametric yield are analyzed. The variation of channel strain due to partial etching of the stress layer is determined, and we find that incl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78bfe7cca88b9ad0af63128d3dc53f29
https://doi.org/10.1117/12.713385
https://doi.org/10.1117/12.713385
Autor:
Jie Wu, Jan Hauschild, Neil H. Judell, Youri van Dommelen, Sjef Tempelaars, William Hughes, Noel Poduje, John Francis Valley, Les Stanton, Alexis Grabbe, Hans Kattouw, Marc Boonman, Jaydeep Kumar Sinha
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XVIII.
Flatness of the incoming silicon wafer is one major contributor to the ultimate focusing limitation of modern exposure tools. Exposure tools are designed to chuck wafers without creating non-flatness and then use focus control to follow as closely as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67c239886f98c5b666c2298210415b1b
https://doi.org/10.1117/12.536092
https://doi.org/10.1117/12.536092