Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hans Joachim Müssig"'
Special topic volume with invited papers only.
Autor:
Piotr Dudek, Hans-Joachim Müssig, Grzegorz Lupina, Jarek Dabrowski, Gunther Lippert, Olaf Seifarth, Grzegorz Kozlowski, Hans-Jürgen Thieme, Thomas Schroeder
Publikováno v:
physica status solidi (b). 248:323-326
Thin layers of SrHfO3, BaHfO3 and BaZrO3 are deposited onto TiN substrates and investigated in view of memory capacitor applications. The as deposited layers are amorphous and show dielectric constants of about 20. Rapid thermal annealing induces cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d744c7192b29328815c07f7c057da28
https://doi.org/10.1002/pssb.201046456
https://doi.org/10.1002/pssb.201046456
Autor:
Gunther Lippert, Piotr Dudek, Hans-Joachim Müssig, Grzegorz Kozlowski, Jarek Dąbrowski, Thomas Schroeder, G. Lupina
Publikováno v:
ECS Transactions. 25:147-151
Thin layers of high dielectric constant materials are of special interest for memory, logic, and passive microelectronic applications. Memory storage capacitors based on these materials should exhibit high capacitance densities and low leakage curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9194b29dc13cf2ab9280d0067b65bdbd
https://doi.org/10.1149/1.3206614
https://doi.org/10.1149/1.3206614
Autor:
Piotr Dudek, Grzegorz Lupina, Hans-Joachim Müssig, Christian Wenger, V. Kubilius, Mindaugas Lukosius, Adulfas Abrutis, Grzegorz Kozlowski, Z. Saltyte, Tomas Katkus, Raimondas Galvelis
Publikováno v:
Chemical Vapor Deposition. 15:167-170
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a65ad92798c6f20ab35c637d47fd0e7b
https://doi.org/10.1002/cvde.200804272
https://doi.org/10.1002/cvde.200804272
Autor:
A. Fox, Dirk Wolansky, Christian Walczyk, Peter Zaumseil, Hans-Joachim Müssig, Thomas Schroeder, Rakesh Sohal, Bernd Tillack
Publikováno v:
Thin Solid Films. 517:4534-4539
This research is targeted to enhance the functionality of bipolar complementary metal-oxide-semiconductor by innovative concepts of embedded resistive random access memory (RRAM) cells integration in the back-end-of-line (BEOL) region. The material o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7b97c27c6231f4c3eff121ef242824
https://doi.org/10.1016/j.tsf.2008.12.036
https://doi.org/10.1016/j.tsf.2008.12.036
Autor:
Piotr Dudek, Grzegorz Lupina, Hans-Joachim Müssig, Jarek Dabrowski, Mindaugas Lukosius, Grzegorz Kozlowski, Christian Wenger
Publikováno v:
Advanced Engineering Materials. 11:259-264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49aaeb71027094e460d4da5bb545482a
https://doi.org/10.1002/adem.200800296
https://doi.org/10.1002/adem.200800296
Publikováno v:
Materials Science Forum. 608:17-26
Requirements and applications for three different scenarios in material science of microelectronics are discussed. Dimension scaling continous at the same pace (More Moore) by changing to immersion lithography and later to extreme ultraviolet lithogr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5307e71a9ba8b7ee5fbfb4418657c22c
https://doi.org/10.4028/www.scientific.net/msf.608.17
https://doi.org/10.4028/www.scientific.net/msf.608.17
Autor:
Gunther Lippert, Seiichi Miyazaki, Akio Ohta, Hans Joachim Müssig, Seiji Inumiya, Jaroslaw Dąbrowski, Y. Nara, Y. Pei, Grzegorz Łupina, Grzegorz Kozlowski
Publikováno v:
Materials Science Forum. 608:55-109
Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbba63826316f86c9ebbe22a84d375a6
https://doi.org/10.4028/www.scientific.net/msf.608.55
https://doi.org/10.4028/www.scientific.net/msf.608.55
Autor:
Christoph Lohe, Christian Wenger, Mindaugas Lukosius, S. Pasko, Hans-Joachim Müssig, Bernhard Seitzinger
Publikováno v:
Chemical Vapor Deposition. 14:123-128
Pure and diluted Ti[N(Et)2]4 precursors are used to grow TiN layers at 400–600 °C by using atomic vapor deposition (AVD®). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The dete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503c13fa32ccc53e4801aece2a783f12
https://doi.org/10.1002/cvde.200806695
https://doi.org/10.1002/cvde.200806695
Publikováno v:
Materials Science and Engineering: B. 109:30-33
We show that an interfacial silicate is formed in a natural way between Si(0 0 1) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide argument
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cbd4c5e42ed114f8c1af1d67183e807
https://doi.org/10.1016/j.mseb.2003.10.086
https://doi.org/10.1016/j.mseb.2003.10.086