Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Hans J. Queisser"'
Autor:
Hans J. Queisser
Publikováno v:
Solar Energy Materials and Solar Cells. 94:1927-1930
High-energy solar photons create just one electron/hole-pair in a typical p–n junction cell, although their energies would suffice to produce two or more pairs. Multiple-junction cells alleviate this problem of energy waste. Another possibility is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d30a9a0e1c4d7e5c54851db233ebd587
https://doi.org/10.1016/j.solmat.2010.08.006
https://doi.org/10.1016/j.solmat.2010.08.006
Autor:
Hans J. Queisser
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 14:1-10
Reducing the geometric dimensionality in a photovoltaic cell is useful in designing optimal contact geometry, in enhancing the conversion efficiency by enlarging the concentrations of photogenerated carriers and, generally, by utilizing thin-film str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a7c1c1d7bd4f41ed161a507f4f92d2
https://doi.org/10.1016/s1386-9477(02)00353-3
https://doi.org/10.1016/s1386-9477(02)00353-3
Publikováno v:
Applied Physics A: Materials Science & Processing. 67:151-154
We apply the novel perforated-silicon process (Ψ-process) for the fabrication of thin (a few microns thick) monocrystalline silicon layers for solar cells with textured surfaces for efficient light trapping. A silicon layer grows epitaxially on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbd1dc07d77a2ac8363c636fe9544413
https://doi.org/10.1007/s003390050753
https://doi.org/10.1007/s003390050753
Publikováno v:
Journal of Applied Physics. 83:4213-4221
Crystalline Si1−xGex compounds offer the possibility for tuning the electronic energy band structure with the chemical composition of the alloy in order to adapt the material for devices utilizing the energy of solar photons at an optimum. We conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::493b34b8d1d5ed6b9eb6e4d5d9d0bdc1
https://doi.org/10.1063/1.367177
https://doi.org/10.1063/1.367177
Publikováno v:
Applied Surface Science. :376-380
Polycrystalline silicon films, prepared by annealing from amorphous precursors, are analyzed by transmission electron microscopy and reveal a logarithmic-normal distribution of grain sizes. Such size distributions also result from various other cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e45e8704600576c56da291163ed6c98c
https://doi.org/10.1016/s0169-4332(97)00494-7
https://doi.org/10.1016/s0169-4332(97)00494-7
Publikováno v:
Solar Energy Materials and Solar Cells. :419-425
Our recent quantum efficiency measurements showed that more than one electron/hole pair per absorbed photon can be created in a solar cell. Thermodynamic consideration of carrier multiplication leads to new efficiency limits for photovoltaic energy c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df61a378742dc505977c3d48a78a6d01
https://doi.org/10.1016/0927-0248(95)00125-5
https://doi.org/10.1016/0927-0248(95)00125-5
Autor:
Hans J. Queisser
Publikováno v:
MRS Bulletin. 20:43-49
The pervasive impetus of modern semiconductor technology has become an accepted fact. Scientific mastering of materials and processes has increased tremendously within a short time frame. Technological control has been derived from this scientific ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::604a2bbe3f7157ce52c51cdcf8301695
https://doi.org/10.1557/s0883769400045899
https://doi.org/10.1557/s0883769400045899
Publikováno v:
Applied Physics A Materials Science & Processing. 61:535-539
Recent investigation on Si solar cells demonstrated the utility of Auger generation for the creation of more than merely one electron/hole pair per absorbed photon. The semiconductor Si requires a minimum photon energy of about 3.4 eV for this intern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e4d04f51dc501d1786ac2936dc7e1c2
https://doi.org/10.1007/bf01540255
https://doi.org/10.1007/bf01540255
Publikováno v:
Solar Energy Materials and Solar Cells. 33:275-285
Solar cells utilize carriers which are generated by absorption of photons with an energy above the fundamental band gap of the semiconductor. A maximum number of one electron/hole pair per photon has thus far been taken for granted under the tacit as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be78c1399f3c3ea498056e9a7bf9b22
https://doi.org/10.1016/0927-0248(94)90230-5
https://doi.org/10.1016/0927-0248(94)90230-5
Publikováno v:
Materials Letters. 19:1-6
We investigated the solution growth of silicon on quartz glass in the temperature range 800–580°C. A thin Al-Si layer, evaporated on the quartz glass, served to improve the wetting between the substrate and the Al Ga solvent. We obtained silicon d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75244de9984ac98585fc0f64b05d243b
https://doi.org/10.1016/0167-577x(94)90096-5
https://doi.org/10.1016/0167-577x(94)90096-5