Výsledky vyhledávání - "Hans J. Lewerenz"

Nanopore Morphology Development during Current Oscillations at the Si/Electrolyte Contact

Autor: Hans J. Lewerenz, Thilo Notz, Juergen Grzanna, Thomas Stempel

Publikováno v: ECS Transactions. 33:127-135

The development of nanopore morphology at the Si/electrolyte contact is considered during the anodic oxidation of n-type silicon in fluoride containing solutions. The applied morphological model is characterized by stress in silicon and cracks and na

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d3366dbadecab0d58b33bf109741366d
https://doi.org/10.1149/1.3553164

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Efficient Solar Cell Structure Prepared by Electrodeposition into Oscillation-Induced Nanoporous Silicon Oxide

Autor: Hans J. Lewerenz, Thomas Stempel

Publikováno v: ECS Transactions. 16:375-389

A silicon-based nanoemitter solar cell is described that operates in the photovoltaic mode of a photoelectrochemical solar cell (PECS). Low temperature scalable processing uses current oscillation-induced nanoporous oxide matrices as templates for no

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14a4d83d1a0a6df58f1e4121fc632c3d
https://doi.org/10.1149/1.2982578

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Model for Current Oscillations at the Si/Electrolyte Contact:Extension to Spatial Resolution

Autor: Juergen Grzanna, Hans J. Lewerenz, Thilo Notz

Publikováno v: ECS Transactions. 16:173-180

A morphological model is given for the anodic oxidation of n-type silicon in fluoride containing solution in a potentiostatic arrangement. An earlier introduced macroscopic version of the model is extended from temporal to spatio-temporal resolution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6263b07a812ea586e64b9280b9c046a2
https://doi.org/10.1149/1.2982553

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Structure of extended defects in epitaxial CuInS 2 /Si(111)

Autor: Hans J. Lewerenz, Alois Krost, Dieter Ellmer, Ralf Hunger, Roland Scheer, Dang Sheng Su

Publikováno v: Thin Solid Films. :437-442

CuInS 2 films grown epitaxially on Si (111) substrates exhibit a number of extended defects such as stacking faults, coherent and incoherent twin boundaries, and micro twins. These defects are partly induced by the interface strain due to the lattice

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71437a476dfcc310dfff18639c46b766
https://doi.org/10.1016/s0040-6090(99)00812-3

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