Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Hans Jürgen Engelmann"'
Autor:
Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-
Externí odkaz:
https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
Autor:
P. Brianceau, M. Rommel, Hans-Jürgen Engelmann, M.-L. Pourteau, J. von Borany, F. Laulagnet, Guido Rademaker, J.-A. Dallery, Ahmed Gharbi, L. Baier, Karl-Heinz Heinig, Raluca Tiron
Publikováno v:
Micro and Nano Engineering
Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering 9(2020), 100074
Micro and Nano Engineering, Vol 9, Iss, Pp 100074-(2020)
Micro and Nano Engineering, Elsevier, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering, 2020, 9, https://doi.org/10.1016/j.mne.2020.100074. ⟨10.1016/j.mne.2020.100074⟩
Micro and Nano Engineering 9(2020), 100074
Micro and Nano Engineering, Vol 9, Iss, Pp 100074-(2020)
International audience; SETs (Single-Electron-Transistors) arouse growing interest for their very low energy consumption. For future industrialization, it is crucial to show a CMOS-compatible fabrication of SETs, and a key prerequisite is the pattern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ffaa0176ed92185b48dbaa77d24531d
https://hal-cea.archives-ouvertes.fr/cea-03409432
https://hal-cea.archives-ouvertes.fr/cea-03409432
Autor:
Wolfhard Möller, Johannes von Borany, Hans-Jürgen Engelmann, Xiaomo Xu, Gregor Hlawacek, Thomas Prüfer, Lothar Bischoff, Stefan Facsko, Karl-Heinz Heinig, Daniel Wolf, René Hübner
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2883-2892 (2018)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via medium-ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::afcad06d35e6724b21babfdf8884d93b
https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
https://doaj.org/article/5156d91379fe4eba94329c4846b8921b
Autor:
Dina H. Triyoso, Elke Erben, Robert Binder, M. Weisheit, Joachim Metzger, Kornelia Dittmar, Hans-Jürgen Engelmann, HH Hidde Brongersma
Publikováno v:
Surface and Interface Analysis. 49:1175-1186
With the transition to ≤28-nm CMOS technology nodes, the surface analytical challenges with regard to steadily decreasing dimensions and still growing materials options raise the demand of high performing surface analysis techniques. Characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd28b97f9762ba36800243f839a22420
https://doi.org/10.1002/sia.6312
https://doi.org/10.1002/sia.6312
Autor:
Wolfhard Möller, Hans-Jürgen Engelmann, Johannes von Borany, Daniel Wolf, Thomas Prüfer, Xiaomo Xu, Karl-Heinz Heinig
Publikováno v:
Journal of Applied Physics
A single sheet of Si nanoclusters with an average diameter of about 2 nm has been formed in a 30 nm Si/7 nm SiO2/Si layer stack by 50 and 60 keV Si+ ion-beam mixing at room temperature and fluences between 8.5 ⋅ 1015 and 2.6 ⋅ 1016 ions/cm2 and b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9c8d716b920989e63ffe9de6c9cce09
Autor:
Ahmed Gharbi, Karl-Heinz Heinig, Johannes von Borany, Hans-Jürgen Engelmann, Wolfhard Möller, Raluca Tiron, Nico Klingner, Gregor Hlawacek, Xiaomo Xu
Publikováno v:
Semiconductor Science and Technology 35(2020)1, 015021
Semiconductor Science and Technology
Semiconductor Science and Technology
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne+ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25a3fdcd6f35e7f7f2c07abc9820ec76
Autor:
Raluca Tiron, Hans-Jürgen Engelmann, L. Baier, Ahmed Gharbi, Guido Rademaker, Karl-Heinz Heinig, J.-A. Dallery, P. Brianceau, J. von Borany, M.-L. Pourteau, F. Laulagnet, M. Rommel
Publikováno v:
Microelectronic Engineering. :111336
This article has been withdrawn at the request of the author(s) and published in Micro and Nano Engineering. The Publisher apologizes for any inconvenience this may cause. The full Elsevier Policy on Article Withdrawal can be found at https://www.els
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b43b81cdf3e25cdf2c0c3b10d835a3f
https://doi.org/10.1016/j.mee.2020.111336
https://doi.org/10.1016/j.mee.2020.111336
Autor:
Jürgen Gluch, Sven Niese, Norman Vogel, Zhongquan Liao, Markus Löffler, Oliver Aubel, Ehrenfried Zschech, Armand Beyer, Hans-Jürgen Engelmann, Kong Boon Yeap, Martin Gall, Christoph Sander, Gerd Schneider, Peter Guttmann, Uwe Mühle, Yvonne Standke, Rüdiger Rosenkranz
Publikováno v:
Advanced Engineering Materials. 16:486-493
The time dependent dielectric breakdown (TDDB) in copper/ultra-low-k on-chip interconnect stacks of integrated circuits has become one of the most critical reliability concerns in recent years. In this paper, a novel experimental in situ microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b177cc06217f69ee7450da49ee7b79d3
https://doi.org/10.1002/adem.201400088
https://doi.org/10.1002/adem.201400088
Autor:
Hans-Jürgen Engelmann, Pavel Potapov
Publikováno v:
Ultramicroscopy. 111:1681-1687
We introduce a method to characterize the chemical distribution in nanostructures using STEM and affiliated spectroscopy techniques. The method is applicable to any nanostructure where the continuous layers of arbitrary geometry and dimensions can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1adc235185013ea0b90424a1c1f26a24
https://doi.org/10.1016/j.ultramic.2011.09.014
https://doi.org/10.1016/j.ultramic.2011.09.014
Autor:
Horst Blumtritt, Jan Hoentschel, Holm Geisler, Oussama Moutanabbir, Angelika Hähnel, Manfred Reiche, Hans-Jürgen Engelmann
Publikováno v:
physica status solidi c. 8:1319-1324
A major challenge for the application of strain engineering to enhance the performance of electronic devices is the quantification of strain on the nanoscale. Besides other techniques (Raman spectroscopy, X-ray diffraction) electron beam techniques a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3062a11c4d96418d599f161ec9ba1d
https://doi.org/10.1002/pssc.201084007
https://doi.org/10.1002/pssc.201084007