Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Hans Hjelmgren"'
Autor:
Alexis Papamichail, Axel R. Persson, Steffen Ricther, Philipp Kuhne, Per O.A. Persson, Mattias Thorsell, Hans Hjelmgren, Niklas Rorsman, Vanya Darakchieva
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe2e0107621ca6bf715cc2b2647899c
https://doi.org/10.1109/csw55288.2022.9930457
https://doi.org/10.1109/csw55288.2022.9930457
Autor:
Ding-Yuan Chen, Mattias Thorsell, Anna Malmros, Jr-Tai Chen, Niklas Rorsman, Hans Hjelmgren, Olof Kordina
Publikováno v:
IEEE Electron Device Letters. 41:828-831
High performance microwave GaN-on-SiC HEMTs are demonstrated on a heterostructure without a conventional thick doped buffer. The HEMT is fabricated on a high-quality $0.25~\boldsymbol {\mu }\text{m}$ unintentional doped GaN layer grown directly on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fae75ac5985a3d18fc4edbb3bfaf9b2b
https://doi.org/10.1109/led.2020.2988074
https://doi.org/10.1109/led.2020.2988074
Autor:
Jr-Tai Chen, Herbert Zirath, Lars Hultman, Anna Malmros, Jun Lu, Einar Ö. Sveinbjörnsson, Hans Hjelmgren, Olof Kordina, Niklas Rorsman
Publikováno v:
IEEE Transactions on Electron Devices. 66:2910-2915
An enhancement of the electron mobility ( $\mu $ ) in InAlN/AlN/GaN heterostructures is demonstrated by the incorporation of a thin GaN interlayer (IL) between the InAlN and AlN. The introduction of a GaN IL increases $\mu $ at room temperature (RT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d61a7f1315093bcd60b5cfa43ad14c
https://doi.org/10.1109/ted.2019.2914674
https://doi.org/10.1109/ted.2019.2914674
Autor:
Mattias Thorsell, Herbert Zirath, Cedric Lacam, Anna Malmros, Hans Hjelmgren, Piero Gamarra, Niklas Rorsman, Sylvain Delage
Publikováno v:
IEEE Transactions on Electron Devices. 66:364-371
The impact of varying the GaN channel layer thickness ( ${t}_{\text {ch}}$ ) in InAlGaN/AlN/GaN HEMTs with C-doped AlGaN back barriers is investigated. ${t}_{\text {ch}}$ was 50, 100, and 150 nm, and the gate length of the fabricated HEMTs ranged fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c2f879f5c65cae4664ba118c43a3aef
https://doi.org/10.1109/ted.2018.2881319
https://doi.org/10.1109/ted.2018.2881319
Autor:
Niklas Rorsman, Mattias Thorsell, Jorg Splettstoesser, Hans Hjelmgren, Sebastian Gustafsson, Hervé Blanck, Jim Thorpe, Olle Axelsson, Thomas Roedle
Publikováno v:
IEEE Transactions on Electron Devices. 63:326-332
This paper investigates the impact of different iron (Fe) buffer doping profiles on trapping effects in microwave AlGaN/gallium nitride (GaN) high electron mobility transistors (HEMTs). We characterize not only the current collapse due to trapping in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49428d02e7013af24ee6fc8589cd932d
https://doi.org/10.1109/ted.2015.2499313
https://doi.org/10.1109/ted.2015.2499313
Autor:
Hans Hjelmgren, Raphaël Aubry, Marie-Antoinette di Forte-Poisson, Anna Malmros, M. Tordjman, Piero Gamarra, Mattias Thorsell, Cedric Lacam, Niklas Rorsman
Publikováno v:
IEEE Electron Device Letters. 36:235-237
Al2O3 films deposited by thermal and plasma-assisted atomic layer deposition (ALD) were evaluated as passivation layers for InAlN/AlN/GaN HEMTs. As a reference, a comparison was made with the more conventional plasma enhanced chemical vapor depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c68cbc83960e640256150ef64f7a0f1
https://doi.org/10.1109/led.2015.2394455
https://doi.org/10.1109/led.2015.2394455
Publikováno v:
IEEE Transactions on Electron Devices. 59:3344-3349
An electron mobility model for AlGaN/GaN heterostructures taking both the lattice temperature and electric field into account is proposed. The numerical device simulation of an ungated Al0.25Ga0.75N/GaN HEMT structure on a 4H-SiC substrate is compare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::809084bce28165da92a1a2dd1aca2028
https://doi.org/10.1109/ted.2012.2218608
https://doi.org/10.1109/ted.2012.2218608
Publikováno v:
IEEE Transactions on Electron Devices. 58:466-472
The high-power density in GaN-based high-electron-mobility transistors (HEMTs) increases demands on the accurate extraction and modeling of electrothermal effects such as self-heating. This paper presents a new electrothermal model of the access resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd137dbc48ed776f27319e3ff4525e0
https://doi.org/10.1109/ted.2010.2093012
https://doi.org/10.1109/ted.2010.2093012
Publikováno v:
IEEE Transactions on Electron Devices. 57:729-732
Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961362d1b10becbc55fbc5674954943b
https://doi.org/10.1109/ted.2009.2039679
https://doi.org/10.1109/ted.2009.2039679
Autor:
Kristoffer Andersson, Hans Hjelmgren, Fredrik Allerstam, M. Sudow, Per-Åke Nilsson, Einar Ö. Sveinbjörnsson, Niklas Rorsman
Publikováno v:
Materials Science Forum. :1103-1106
Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d7f1b55284ff4806a5a5a71fa7e1eb
https://doi.org/10.4028/www.scientific.net/msf.600-603.1103
https://doi.org/10.4028/www.scientific.net/msf.600-603.1103