Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hans F. Wardenga"'
Publikováno v:
Materials, Vol 8, Iss 2, Pp 561-574 (2015)
Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray
Externí odkaz:
https://doaj.org/article/899f26c6bdd64df58396435143ee3ddf
Publikováno v:
Physical Chemistry Chemical Physics. 24:1072-1080
Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and undoped CeO2 have been determined by means of in situ photoelectron spectroscopy on films grown with different surface orientation and preparation conditions.
Autor:
Roger A. De Souza, Thomas E. Weirich, Andreas Klein, Benjamin J. Statham, Stephan P. Waldow, Hans F. Wardenga
Publikováno v:
ACS Applied Materials & Interfaces. 12:36768-36777
The exchange of 18O between gaseous molecular oxygen and thin-film samples of Ce0.99Gd0.01O1.995 with two different, nominal surface orientations [(111) and (110)] was studied. Oxygen isotope exchange experiments were conducted in the temperature ran
Publikováno v:
Physical chemistry chemical physics : PCCP. 24(2)
Surface Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and nominally undoped CeO
Publikováno v:
The Journal of Physical Chemistry C. 123:6340-6350
We studied the behavior of oxygen interstitials in donor-doped ceria using equilibrium conductivity measurements, conductivity relaxation experiments, and (18O2/16O2) isotope exchange experiments. ...
Autor:
Stephan P, Waldow, Benjamin J, Statham, Hans F, Wardenga, Thomas E, Weirich, Andreas, Klein, Roger A, De Souza
Publikováno v:
ACS applied materialsinterfaces. 12(32)
The exchange of
Autor:
Mareike V. Frischbier, Oliver Bierwagen, Mirko Weidner, Andreas Klein, Junjun Jia, Yuzo Shigesato, Hans F. Wardenga
Publikováno v:
Thin Solid Films. 614:62-68
The influence of dopant species and concentration on the grain boundary scattering of differently doped In 2 O 3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundarie
Autor:
Hans F. Wardenga, Andreas Klein
Publikováno v:
Applied Surface Science. 377:1-8
Differently oriented CeO2 thin films were prepared by radio frequency magnetron sputter deposition from a nominally undoped CeO2 target. (111), (110) and (100) oriented films were achieved by deposition onto Al2O3(0001)/Pt(111), MgO(110)/Pt(110) and
Publikováno v:
physica status solidi (a). 213:1615-1624
CuO thin films were grown by reactive magnetron sputtering and analyzed with respect to their structural, chemical, optical, and electrical properties. The films are strongly p-type with carrier concentrations of ∼ 1020 cm−3. Carrier accumulation
Publikováno v:
Langmuir. 30:10878-10885
Electroless plating is a facile wet-chemical process for the creation of metal thin films on arbitrary substrates, which can be used to produce intricate nanomaterials. In this study, we demonstrate how nanotubes and nanowires can be electrolessly de