Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hans F, Wardenga"'
Publikováno v:
Physical Chemistry Chemical Physics. 24:1072-1080
Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and undoped CeO2 have been determined by means of in situ photoelectron spectroscopy on films grown with different surface orientation and preparation conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::890c6d6cc76c17be64855525a93aac54
https://doi.org/10.1039/d1cp03776e
https://doi.org/10.1039/d1cp03776e
Autor:
Roger A. De Souza, Thomas E. Weirich, Andreas Klein, Benjamin J. Statham, Stephan P. Waldow, Hans F. Wardenga
Publikováno v:
ACS Applied Materials & Interfaces. 12:36768-36777
The exchange of 18O between gaseous molecular oxygen and thin-film samples of Ce0.99Gd0.01O1.995 with two different, nominal surface orientations [(111) and (110)] was studied. Oxygen isotope exchange experiments were conducted in the temperature ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e4e7f8a18a52d8b59b2cc6d1f7b64fd
https://doi.org/10.1021/acsami.0c09605
https://doi.org/10.1021/acsami.0c09605
Publikováno v:
Physical chemistry chemical physics : PCCP. 24(2)
Surface Fermi level positions, ionisation potentials, and work functions of acceptor-, donor-, and nominally undoped CeO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2f9c3d41b60099ca8b977ffcf0e9fb4b
https://pubmed.ncbi.nlm.nih.gov/34927638
https://pubmed.ncbi.nlm.nih.gov/34927638
Publikováno v:
The Journal of Physical Chemistry C. 123:6340-6350
We studied the behavior of oxygen interstitials in donor-doped ceria using equilibrium conductivity measurements, conductivity relaxation experiments, and (18O2/16O2) isotope exchange experiments. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee44434f486d9c76df4a399a92251fe
https://doi.org/10.1021/acs.jpcc.8b10613
https://doi.org/10.1021/acs.jpcc.8b10613
Autor:
Stephan P, Waldow, Benjamin J, Statham, Hans F, Wardenga, Thomas E, Weirich, Andreas, Klein, Roger A, De Souza
Publikováno v:
ACS applied materialsinterfaces. 12(32)
The exchange of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f13ab66ff2aff4c001e46be58db408c7
https://pubmed.ncbi.nlm.nih.gov/32668162
https://pubmed.ncbi.nlm.nih.gov/32668162
Autor:
Mareike V. Frischbier, Oliver Bierwagen, Mirko Weidner, Andreas Klein, Junjun Jia, Yuzo Shigesato, Hans F. Wardenga
Publikováno v:
Thin Solid Films. 614:62-68
The influence of dopant species and concentration on the grain boundary scattering of differently doped In 2 O 3 thin films is studied by means of room temperature and temperature dependent Hall effect measurements. Barrier heights at grain boundarie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66de913e4096b3daeeacfd4bda567423
https://doi.org/10.1016/j.tsf.2016.03.022
https://doi.org/10.1016/j.tsf.2016.03.022
Autor:
Hans F. Wardenga, Andreas Klein
Publikováno v:
Applied Surface Science. 377:1-8
Differently oriented CeO2 thin films were prepared by radio frequency magnetron sputter deposition from a nominally undoped CeO2 target. (111), (110) and (100) oriented films were achieved by deposition onto Al2O3(0001)/Pt(111), MgO(110)/Pt(110) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cf9d5e0d97843ec400bc4732aca6d0f
https://doi.org/10.1016/j.apsusc.2016.03.091
https://doi.org/10.1016/j.apsusc.2016.03.091
Publikováno v:
physica status solidi (a). 213:1615-1624
CuO thin films were grown by reactive magnetron sputtering and analyzed with respect to their structural, chemical, optical, and electrical properties. The films are strongly p-type with carrier concentrations of ∼ 1020 cm−3. Carrier accumulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03dc65ef5ca4114720a07cc4ea889203
https://doi.org/10.1002/pssa.201533018
https://doi.org/10.1002/pssa.201533018
Publikováno v:
Langmuir. 30:10878-10885
Electroless plating is a facile wet-chemical process for the creation of metal thin films on arbitrary substrates, which can be used to produce intricate nanomaterials. In this study, we demonstrate how nanotubes and nanowires can be electrolessly de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f32180a3509164f895c50ad694c785e
https://doi.org/10.1021/la5012956
https://doi.org/10.1021/la5012956
Publikováno v:
Materials
Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::667895dbfab11a651f1c348d84512cfa
https://pubmed.ncbi.nlm.nih.gov/28787957
https://pubmed.ncbi.nlm.nih.gov/28787957