Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Hans Eichhorn"'
Autor:
Juergen Gramss, Bertram Buerger, Hans Eichhorn, Renate Jaritz, Klaus Kunze, Dirk Beyer, Ulrich Baetz, Volker Neick, Nikola Belic, Melchior Lempke
Publikováno v:
22nd European Mask and Lithography Conference.
There is no doubt that shaped beam systems have been well established in the mask write community since the introduction of the 130nm technology node. Moreover, they are successfully advancing to conquer also the wafer direct write market. To be able
Publikováno v:
SPIE Proceedings.
The ever growing layout complexity and escalating data volumes to be handled in high-end mask making processes using variable-shaped beam writers (VSB) require totally new computing and software solutions for data preparation. The high-performance, c
Autor:
Albrecht Ehrmann, Florian Letzkus, Joerg Butschke, W. H. Bruenger, H. Grimm, R. Berger, Stefan Hirscher, Andreas Wolter, Hans Eichhorn, Reinhard Springer, Rainer Kaesmaier, de P.W.H. Jager, Andreas Dietzel, Olaf Fortagne, D. Adam, M. Boehm, Bruce D. Terris, Herbert Vonach, Herbert Buschbeck, John C. Wolfe, Gerhard Stengl, Hans Loeschner, A. Chalupka, G. Gross, Gertraud Lammer, Paul Ruchhoeft, Elmar Platzgummer
Publikováno v:
Journal of Microlithography, Microfabrication and Microsystems, 2(34), 34-48. SPIE
Recent studies have shown the utility of ion projection lithography (IPL) for the manufacturing of integrated circuits. In addition, ion projection direct structuring (IPDS) can be used for resistless, noncontact modification of materials. In coopera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cafd3bf27efb75ddbb8574835c19c4a
https://research.tue.nl/nl/publications/2580e19c-8566-4ce0-9cc7-b4f21c54496e
https://research.tue.nl/nl/publications/2580e19c-8566-4ce0-9cc7-b4f21c54496e
Autor:
Michael Gehre, Detlef Melzer, Ulrich Baetz, Bernd Schnabel, Hans Eichhorn, Klaus Kunze, Traugott Schulmeiss, Juergen Gramss
Publikováno v:
SPIE Proceedings.
In the past years the address grid for layout design, data preparation and exposure has been constantly reduced. Currently the ITRS Roadmap specifies 4nm Mask Design Grid for the 100nm technology node. The possibilities and challenges of pattern data
Publikováno v:
High-performance Fibres ISBN: 9780849313042
High-performance Fibres
High-performance Fibres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be3c10c09c1fd06dc7371259f659f555
https://doi.org/10.1201/9781439823071.ch9
https://doi.org/10.1201/9781439823071.ch9
Autor:
Nikola Belic, Juergen Gramss, B. Buerger, Hans Eichhorn, Uwe Baetz, Melchior Lemke, Hans Eisenmann
Publikováno v:
SPIE Proceedings.
This paper will highlight an enhanced MGS layout data post processor and the results of its industrial application. Besides the preparation of hierarchical GDS layout data, the processing of flat data has been drastically accelerated. The application
Publikováno v:
SPIE Proceedings.
In general the writing strategies of the Leica ZBA 320 tool are presented to the audience. Methods to achieve a high productivity in writing masks of the next generation are highlighted. Thus, such writing modes like variable-shaped beam using 6 shap
Fast layout data processing and repetitive structure exposure for high-throughput e-beam lithography
Publikováno v:
SPIE Proceedings.
Constantly growing chip areas, scaling down of pattern sizes, proximity corrections, OPC etc. gives rise to an expansion of layout data. The methods of our JENOPTIK universal exposure systems outlined in this paper serve the purpose of drastically re
Autor:
Hans Eichhorn, Gabriele Eichhorn
Publikováno v:
Psychotherapie in der Medizin ISBN: 9783531120959
Herbeck (1988) verweist darauf, das sich die theoretische Abgrenzung der Psychologie in der Psychiatrie als schwierig erweist, obwohl die Vielzahl der Beitrage auf dem 7. Kongres der Gesellschaft fur medizinische Psychologie im Mai 1988 in Gottingen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5464f6171d3aeb3b5b832b3ef54f0fde
https://doi.org/10.1007/978-3-663-01127-9_19
https://doi.org/10.1007/978-3-663-01127-9_19