Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Hans D. Hochheimer"'
Autor:
Willem L. Vos
Publikováno v:
Science. 258:1014-1014
Publikováno v:
Journal of Physics and Chemistry of Solids. 71:832-835
Results of angle dispersive X-ray diffraction (ADXRD) measurements on the defect chalcopyrites (DCP), HgAl 2 Se 4 and CdAl 2 S 4 up to 22.2 and 34 GPa, respectively, are reported. The ambient tetragonal phase is retained in HgAl 2 Se 4 and CdAl 2 S 4
Publikováno v:
Zeitschrift für Naturforschung B. 63:661-667
Results of a high-pressure angle dispersive X-ray diffraction and electrical resistance study on quasi one-dimensional BaVS3 are reported. They show that no structural transition occurs up to 26 GPa. However, there is evidence of gradual disordering
Publikováno v:
Solid State Communications. 142:369-372
The results of electrical resistance and angle dispersive X-ray diffraction measurements at high pressures and ambient temperature on the chalcogenide spinel, CuIr 2 S 4 are reported. The resistance increases gradually and reaches around 12 GPa a val
Publikováno v:
High Pressure Research. 26:331-334
This work presents a time-resolved spectroscopic study of MnF2 as grown and milled into nanoparticles. We find that high pressure (HP) induces photoluminescence (PL) at room temperature (RT) above 13 GPa in MnF2 single crystals. RT-PL occurs as a con
Autor:
S. Tkachev, B. K. Godwal, A. Eifler, S. Meenakshi, V. Vijyakumar, I. Orgzall, Hans D. Hochheimer
Publikováno v:
Journal of Physics and Chemistry of Solids. 67:1660-1667
We report the results of an X-ray diffraction study of CdAl 2 Se 4 and of Raman studies of HgAl 2 Se 4 and ZnAl 2 Se 4 at room temperature, and of CdAl 2 S 4 and CdAl 2 Se 4 at 80 K at high pressure. The ambient pressure phase of CdAl 2 Se 4 is stabl
Publikováno v:
Solid State Communications. 132:731-736
The ambient structural details and the results of room temperature high pressure angle dispersive X-ray diffraction and electrical resistance measurements on the quasi-one-dimensional sulfide, InV 6 S 8 , to a pressure of 25 GPa are reported. The mat
Publikováno v:
Solid State Communications. 129:511-514
We report the results of electrical resistance measurements at high pressures on Cs 2 MoS 4 and KTbP 2 Se 6 . The results of high pressure X-ray diffraction study of Cs 2 MoS 4 are also presented. Interestingly, in the case of Cs 2 MoS 4 the resistan
Autor:
Hans D. Hochheimer, Richard E. Etters
The role of high pressure experiments in the discovery of supercon ducting materials with a T. above liquid nitrogen temperature has demon strated the importance of such experiments. The same role holds true in the tailoring of materials for opto
Publikováno v:
Journal of Physics and Chemistry of Solids. 63:597-603
We have observed a pressure induced phase transition in KTbP 2 Se 6 at about 9.2 GPa which was accompanied by a discontinuous jump of the absorption edge of about 0.5 eV into the red. We have proposed that the high pressure phase is due to charge tra