Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Hans Brugger"'
Autor:
Holger Koser, Hans Brugger
Publikováno v:
III-Vs Review. 8:41-45
A selective determination of the carrier density and mobility of a two-dimensional electron or hole gas in HFET or MODFET samples can be performed by measuring the magnetic-field-dependent resistivity and Hall coefficient over a field range of 1 Tesl
Publikováno v:
Solid-State Electronics. 37:1001-1004
A new type of a quasi one-dimensional planar field-effect-transistor (FET) with two lateral and symmetric in-plane-gate electrodes (IPG) is realized. The vertical layer sequence consists of a GaAs/AlGaAs heterostructure and a δ-doped pseudomorphic I
Publikováno v:
Solid-State Electronics. 37:801-804
A new type of a hydrostatic pressure sensing device based on a thin AlAs/GaAs/AlAs double-barrier resonant tunneling (DBRT) structure is reported, which operates at room temperature. The current swing ( ΔI ) in the negative-differential resistance r
Publikováno v:
Acta Physica Polonica A. 84:625-628
Autor:
R. Deufel, U. Meiners, Hans Brugger, A. Marten, R. Sauer, Klaus von Klitzing, M. Rossmanith, C. Wolk
Publikováno v:
Microelectronic Engineering. 15:663-666
A resonant tunneling diode with the highest room temperature peak-to-valley current ratio (PVR) in the GaAs/AlGaAs system is described. Using a pseudomorphic InGaAs quantum well for carrier injection, room temperature PVR = 7.2 and liquid nitrogen te
Publikováno v:
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
The influence of the barrier thickness (L/sub B/) and the spacer length (L/sub S/) on the current/voltage behavior of AlAs/GaAs/AlAs resonant tunneling diodes (RTDs) to achieve a high peak current density (J/sub p/) and a low valley current density (
Autor:
Peter W. Epperlein, Hans Brugger
Publikováno v:
Applied Physics Letters. 56:1049-1051
Spatially resolved Raman scattering measurements ( 100 K for P>1 MW/cm2). Raman line scans show hot spot regions at the facets. Degradation strength correlates with facet heating. Disorder‐activated Raman phonon modes indicate strong crystal damage
Publikováno v:
MRS Proceedings. 281
A technology based on a combination of selective implantation for lateral patterning and a following large area regrowth by molecular beam epitaxy (MBE) is introduced. The technology allows the monolithic integration of devices with different vertica
Publikováno v:
Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials.
Autor:
Hans Brugger
Publikováno v:
Light Scattering in Semiconductor Structures and Superlattices ISBN: 9781489936974
Novel semiconductor heterojunctions, superlattices and quantum well structures exhibit a large number of new effects and offer the possibility for future device applications with reduced dimensionality. Considerable advances in the growth and process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787d40476c2e98c722a415dea2344186
https://doi.org/10.1007/978-1-4899-3695-0_19
https://doi.org/10.1007/978-1-4899-3695-0_19