Zobrazeno 1 - 10
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pro vyhledávání: '"Hannon, J."'
Autor:
Li, Meifang, Hannon, J. B., Tromp, R. M., Sun, Jiebing, Li, Junwen, Shenoy, V. B., Chason, E.
We have determined the equilibrium shape of graphene domains grown on Ni(111) via carbon segregation at 925{\deg}C. In situ, spatially-resolved electron diffraction measurements were used to determine the crystallographic orientation of the edges of
Externí odkaz:
http://arxiv.org/abs/1305.0580
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at el
Externí odkaz:
http://arxiv.org/abs/1108.2627
Publikováno v:
Appl. Phys. Lett. 98, 113103 (2011)
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope la
Externí odkaz:
http://arxiv.org/abs/1102.0675
Autor:
Oida, S., McFeely, F. R., Hannon, J. B., Tromp, R. M., Copel, M., Chen, Z., Sun, Y., Farmer, D. B., Yurkas, J.
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disrup
Externí odkaz:
http://arxiv.org/abs/1003.5702
Autor:
Hannon, J.
Fluid flow patterns and turbulence levels are instrumental in determining chemical reactor performance. Parameters such as stirrer type and size, fluid physical properties, chemical species concentrations and flow rates can strongly influence the saf
Externí odkaz:
http://dspace.lib.cranfield.ac.uk/handle/1826/11368
Publikováno v:
Science, 2006 Sep 01. 313(5791), 1266-1269.
Externí odkaz:
https://www.jstor.org/stable/3846859
The interference of the directly emitted photoelectron wave and the wave scattered coherently by neighboring atoms gives holographic fringes in the photoelectron emission intensity $I(\hat{\bf R})$. In the electron emission holography technique in su
Externí odkaz:
http://arxiv.org/abs/cond-mat/9709302
Akademický článek
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Publikováno v:
Science, 2002 Jan 01. 295(5553), 299-301.
Externí odkaz:
https://www.jstor.org/stable/3075801
Akademický článek
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