Zobrazeno 1 - 10
of 7 864
pro vyhledávání: '"Hannon, J."'
Autor:
Li, Meifang, Hannon, J. B., Tromp, R. M., Sun, Jiebing, Li, Junwen, Shenoy, V. B., Chason, E.
We have determined the equilibrium shape of graphene domains grown on Ni(111) via carbon segregation at 925{\deg}C. In situ, spatially-resolved electron diffraction measurements were used to determine the crystallographic orientation of the edges of
Externí odkaz:
http://arxiv.org/abs/1305.0580
We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at el
Externí odkaz:
http://arxiv.org/abs/1108.2627
Publikováno v:
Appl. Phys. Lett. 98, 113103 (2011)
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope la
Externí odkaz:
http://arxiv.org/abs/1102.0675
Autor:
Zinszer BD; Department of Psychology, Swarthmore College, Swarthmore, Pennsylvania, USA., Hannon J; Department of Linguistics and Cognitive Science, University of Delaware, Newark, Delaware, USA., Hu A; Department of Linguistics and Cognitive Science, University of Delaware, Newark, Delaware, USA., Kouadio AÉ; UFR Sciences de l'Homme et de la Société, Université Félix Houphouët-Boigny, Abidjan, Côte d'Ivoire., Akpé H; UFR Sciences de l'Homme et de la Société, Université Félix Houphouët-Boigny, Abidjan, Côte d'Ivoire., Tanoh F; UFR Sciences de l'Homme et de la Société, Université Félix Houphouët-Boigny, Abidjan, Côte d'Ivoire.; Département Sociologie, Université Peleforo Gon Coulibaly, Korhogo, Côte d'Ivoire., Wang M; Department of Psychology, Swarthmore College, Swarthmore, Pennsylvania, USA., Qi Z; Department of Communication Sciences and Disorders, Northeastern University, Boston, Massachusetts, USA., Jasińska K; Haskins Laboratories, New Haven, Connecticut, USA.; Department of Applied Psychology and Human Development, University of Toronto, Toronto, Canada.
Publikováno v:
Developmental science [Dev Sci] 2024 Sep; Vol. 27 (5), pp. e13448. Date of Electronic Publication: 2023 Sep 24.
Autor:
Greenberg E; Sports Medicine and Performance Center, Children's Hospital of Philadelphia, Philadelphia, PA, USA., Hannon J; Young Athlete Center, St. Louis Children's Hospital, St. Louis, MO, USA., Chaclas N; Sports Medicine and Performance Center, Children's Hospital of Philadelphia, Philadelphia, PA, USA., Albaugh J; Sports Medicine and Performance Center, Children's Hospital of Philadelphia, Philadelphia, PA, USA., Molony J; Pediatric Rehabilitation & Young Athlete Center, Hospital for Special Surgery, New York, NY, USA., Williams BA; Sports Medicine and Performance Center, Children's Hospital of Philadelphia, Philadelphia, PA, USA.
Publikováno v:
HSS journal : the musculoskeletal journal of Hospital for Special Surgery [HSS J] 2024 Aug; Vol. 20 (3), pp. 365-370. Date of Electronic Publication: 2024 Mar 13.
Autor:
Oida, S., McFeely, F. R., Hannon, J. B., Tromp, R. M., Copel, M., Chen, Z., Sun, Y., Farmer, D. B., Yurkas, J.
When epitaxial graphene layers are formed on SiC(0001), the first carbon layer (known as the "buffer layer"), while relatively easy to synthesize, does not have the desirable electrical properties of graphene. The conductivity is poor due to a disrup
Externí odkaz:
http://arxiv.org/abs/1003.5702
Publikováno v:
Science, 2006 Sep 01. 313(5791), 1266-1269.
Externí odkaz:
https://www.jstor.org/stable/3846859
The interference of the directly emitted photoelectron wave and the wave scattered coherently by neighboring atoms gives holographic fringes in the photoelectron emission intensity $I(\hat{\bf R})$. In the electron emission holography technique in su
Externí odkaz:
http://arxiv.org/abs/cond-mat/9709302
Akademický článek
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Autor:
Dinh H; Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA., Moses J; CF Technologies, Inc., Hyde Park, Massachusetts 02136, USA., Hannon J; CF Technologies, Inc., Hyde Park, Massachusetts 02136, USA., Wilson V; CF Technologies, Inc., Hyde Park, Massachusetts 02136, USA., Karamanis G; Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA., Krishnamachari V; Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA., Hodes M; Department of Mechanical Engineering, Tufts University, Medford, Massachusetts 02155, USA.
Publikováno v:
The Review of scientific instruments [Rev Sci Instrum] 2024 Feb 01; Vol. 95 (2).