Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Hanno Küpers"'
Autor:
Achim Trampert, Ryan B. Lewis, Holger T. Grahn, Pierre Corfdir, Timur Flissikowski, Michael Niehle, Oliver Brandt, Lutz Geelhaar, Hanno Küpers
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de4b22befe0cb0d27481fbc5d2948bb5
http://arxiv.org/abs/2106.12309
http://arxiv.org/abs/2106.12309
Autor:
Ullrich Pietsch, Arman Davtyan, Tobias U. Schülli, Ryan B. Lewis, Michael Niehle, Hanno Küpers, Jonas Lähnemann, Florian Bertram, Danial Bahrami, Steven J. Leake, Ali AlHassan, Lutz Geelhaar
Publikováno v:
Nanotechnology 31(21), 1-7 (2020). doi:10.1088/1361-6528/ab7590
Nanotechnology 31(21), 1-7 (2020). doi:10.1088/1361-6528/ab7590
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabric
We report on the direct correlation between the structural and optical properties of single, as-grown core-multi-shell GaAs/In$_{0.15}$Ga$_{0.85}$As/GaAs/AlAs/GaAs nanowires. Fabric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fedbdd356726ce7e6dc1681a6de8e00d
Autor:
Carsten Richter, Arman Davtyan, Danial Bahrami, Ryan B. Lewis, Florian Bertram, Genziana Bussone, Ullrich Pietsch, Hanno Küpers, Lutz Geelhaar, Ali Al Hassan
Publikováno v:
Journal of Applied Crystallography. 51:1387-1395
Typically, core–shell–shell semiconductor nanowires (NWs) made from III–V materials with low lattice mismatch grow pseudomorphically along the growth axis, i.e. the axial lattice parameters of the core and shell materials are the same. Therefor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f4fe00cad7b3a67bba9548623e77dd
https://doi.org/10.1107/s1600576718011287
https://doi.org/10.1107/s1600576718011287
Publikováno v:
Journal of Crystal Growth. 459:43-49
We present a novel two-step growth approach for the Ga-assisted growth of GaAs nanowires (NWs) by molecular beam epitaxy on Si. In the first step only Ga is deposited for the controlled formation of Ga droplets and in the second step NWs are grown fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5e92d94f351da136b0fbad4f7606a93
https://doi.org/10.1016/j.jcrysgro.2016.11.065
https://doi.org/10.1016/j.jcrysgro.2016.11.065
Publikováno v:
Physical Review Materials. 3
The incubation time preceding nucleation and growth of surface nanostructures is interesting from a fundamental viewpoint but also of practical relevance as it determines statistical properties of nanostructure ensembles such as size homogeneity. Usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bd0bd42c8af9474e9fc214875918854
https://doi.org/10.1103/physrevmaterials.3.073401
https://doi.org/10.1103/physrevmaterials.3.073401
Autor:
Ali Al Hassan, Ullrich Pietsch, Arman Davtyan, Lutz Geelhaar, Abbes Tahraoui, Hanno Küpers, Julian Jakob, Ludwig Feigl, Philipp Schroth, Tilo Baumbach, Mahmoud Al Humaidi
Publikováno v:
Nano letters. 19(7)
The growth of regular arrays of uniform III-V semiconductor nanowires is a crucial step on the route toward their application-relevant large-scale integration onto the Si platform. To this end, not only does optimal vertical yield, length, and diamet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b383185962681375443121af283b07b
https://pubmed.ncbi.nlm.nih.gov/31150261
https://pubmed.ncbi.nlm.nih.gov/31150261
Publikováno v:
Journal of Crystal Growth. 531:125320
We study the evolution of the shape (degree and sign of tapering) of Ga-assisted GaAs nanowires in molecular beam epitaxy. Here, we extend our previously published model for the diameter evolution in order to predict the nanowire shape over a large r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0857e3f0de2ae49e7f90fd89023362ac
https://doi.org/10.1016/j.jcrysgro.2019.125320
https://doi.org/10.1016/j.jcrysgro.2019.125320
Autor:
Ryan B. Lewis, L. Hüttenhofer, Abbes Tahraoui, Stefan Ludwig, Hanno Küpers, D. Xydias, Oliver Marquardt, Lutz Geelhaar, S. Rauwerdink
Publikováno v:
Physical Review Applied. 10
Group III-group V nanowires are comprehensively studied because of their suitability for optoelectronic quantum technology applications. However, their small dimensions and the spatial separation of carriers from the wire surface render electrical co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c82b5f271bbdbe533bdf941594471e
https://doi.org/10.1103/physrevapplied.10.034024
https://doi.org/10.1103/physrevapplied.10.034024
Autor:
Hanno Küpers, Oliver Brandt, Lutz Geelhaar, Pierre Corfdir, Ryan B. Lewis, Timur Flissikowski
Publikováno v:
Nano letters. 18(4)
The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging possibilities for novel heterostructure design and strain engineering. In this work, we realize arrays of extremely and controllably bent nanowires comprising lattice-mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a262189a5f51d725751f3b10a76c8c3
https://pubmed.ncbi.nlm.nih.gov/29570304
https://pubmed.ncbi.nlm.nih.gov/29570304
Autor:
Wan-Hsien Lin, Esperanza Luna, Oliver Brandt, Hanno Küpers, Uwe Jahn, Ryan B. Lewis, Lutz Geelhaar
Publikováno v:
Nanotechnology. 28(41)
Twin boundaries and boundaries between zincblende (ZB) and wurtzite (WZ) segments of GaAs-related nanowires (NWs) form intrinsic heterointerfaces with essential consequences for the application of such nanomaterials in optoelectronic devices. We show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b908bd6c857d63a1822d0b5d5475868d
https://pubmed.ncbi.nlm.nih.gov/28767046
https://pubmed.ncbi.nlm.nih.gov/28767046