Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hanni Xu"'
Autor:
Haitao Li, Yidong Xia, Hanni Xu, Lifei Liu, Xuefei Li, Zhenjie Tang, Xiangzhong Chen, Aidong Li, Jiang Yin, Zhiguo Liu
Publikováno v:
AIP Advances, Vol 1, Iss 3, Pp 032141-032141-6 (2011)
We have proposed a kind of memristive device based on the junctions employing Ti as the reactive electrodes. The role of electrically-derived redox of Ti in such memristive switching is shown. The structural and chemical evidence of the electrically-
Externí odkaz:
https://doaj.org/article/ca09bd9452c54e46a5aeb28712d9c97c
Autor:
Xu Gao, Yidong Xia, Bo Xu, Jizhou Kong, Hongxuan Guo, Kui Li, Haitao Li, Hanni Xu, Kai Chen, Jiang Yin, Zhiguo Liu
Publikováno v:
Journal of Applied Physics; Oct2010, Vol. 108 Issue 7, p074506, 5p, 7 Graphs
Publikováno v:
Materials Letters. 92:21-24
The charge trap flash memory cells incorporating high- k ZrO 2 /Al 2 O 3 nanolaminate as charge trapping layers and amorphous Al 2 O 3 as tunneling and blocking layers were prepared, investigated and optimized. The interfaces between ZrO 2 /Al 2 O 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e56afbad2ba0d6dfdefc7de478d3302
https://doi.org/10.1016/j.matlet.2012.10.024
https://doi.org/10.1016/j.matlet.2012.10.024
Publikováno v:
Scientific Reports
Ferroelectric tunnel junctions (FTJs) are quantum nanostructures that have great potential in the hardware basis for future neuromorphic applications. Among recently proposed possibilities, the artificial cognition has high hopes, where encoding, tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdc3993ceb8de46b095f6db573f9113c
https://doi.org/10.1038/srep27022
https://doi.org/10.1038/srep27022
Publikováno v:
Solid State Communications. 152:1150-1154
We report non-saturating linear magnetoresistance (LMR) in silver-poor composite thin films of Ag10Ge15Te75 (AGT). The LMR increases with decreasing temperature and reaches a value of 110% at 200 K under a magnetic field of 70 kOe. The observed magne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddb854368e59c948df9399607dd3d9dc
https://doi.org/10.1016/j.ssc.2012.03.042
https://doi.org/10.1016/j.ssc.2012.03.042
Publikováno v:
Applied Physics A. 108:217-222
ZrO2 nanocrystallites based charge trap memory cells by incorporating a (ZrO2)0.6(SiO2)0.4 film as a charge trapping layer and amorphous Al2O3 as tunneling and blocking layer were prepared and investigated. The precipitation reaction in charge trappi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6991714e71c4b69275b9b1cf36e25bad
https://doi.org/10.1007/s00339-012-6877-7
https://doi.org/10.1007/s00339-012-6877-7
Publikováno v:
Physica B: Condensed Matter. 406:4436-4439
The thickness dependent crystallization behavior of thin amorphous Ge 2 Sb 2 Te 5 (GST) films sandwiched between different cladding materials has been investigated based on a thermodynamic model. It is revealed that there is a critical thickness belo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f78fab47fa41101b2a05a805b67ad8ae
https://doi.org/10.1016/j.physb.2011.09.003
https://doi.org/10.1016/j.physb.2011.09.003
Autor:
Zhiguo Liu, Feng Yan, Aidong Li, Xinhua Zhu, Yidong Xia, Jiang Yin, Zhenjie Tang, Yan Chen, Haitao Li, Hanni Xu
Publikováno v:
Microelectronic Engineering. 88:3227-3230
Charge trapping memory capacitors using (ZrO"2)"0"."8(SiO"2)"0"."2 film as charge trapping layer and amorphous Al"2O"3 as the tunneling layer and blocking layer were fabricated for nonvolatile semiconductor memory application. The ZrO"2 nanocrystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9432ccead0561c0680a0a30d9ada3cd5
https://doi.org/10.1016/j.mee.2011.06.025
https://doi.org/10.1016/j.mee.2011.06.025
Publikováno v:
Journal of Materials Science. 46:2267-2272
Bi2Te3 nanobelts were synthesized on quartz substrates by gold-mediated vapor–liquid–solid (VLS) growth through a thermal evaporation process. The structure and morphology were characterized by using scanning electron microscopy (SEM) and transmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0e6217eac368afffcb7f9948fa8cd4
https://doi.org/10.1007/s10853-010-5066-3
https://doi.org/10.1007/s10853-010-5066-3
Publikováno v:
Journal of Materials Science. 45:3569-3574
Nonvolatile phase-change memory devices with 500 nm contact hole based on In2Te3 were successfully fabricated by using focused ion beam, pulsed laser deposition, and dc magnetic sputtering techniques. In2Te3 films were characterized by using differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fb8c409e2a168eadb2f280f27575397
https://doi.org/10.1007/s10853-010-4401-z
https://doi.org/10.1007/s10853-010-4401-z