Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hannes Watzinger"'
Autor:
Hannes Watzinger, Josip Kukučka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian-Jun Zhang, Georgios Katsaros
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
Germanium’s electronic structure and large, tunable spin-orbit coupling makes it a good material for constructing hole-based quantum devices. Here the authors demonstrate the fabrication and two-axis control of a hole spin qubit in a germanium doub
Externí odkaz:
https://doaj.org/article/28689aff8fc8417097e64e2cf49645e7
Autor:
Gang Xu, Hannes Watzinger, Tina Wang, Hai-Ou Li, Fei Gao, Jie-Yin Zhang, Jian-Jun Zhang, Guo-Ping Guo, Ke Wang, Georgios Katsaros, Ming Ming, Josip Kukučka, Lada Vukušić, Jian-Huan Wang
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole
Autor:
Fei Gao, Lada Vukušić, Georgios Katsaros, Jian-Jun Zhang, Ting Wang, Hannes Watzinger, Karsten Held, Josip Kukučka
Publikováno v:
Nano Letters
Using inelastic cotunneling spectroscopy, we observe a 55{\mu}eV zero field splitting in the spin triplet manifold of Ge hut wire quantum dots. The degeneracy of the heavy hole triplet state is lifted since the interplay of strong spin orbit coupling
Autor:
Gui‐Lei Wang, Christoph Kloeffel, Jian-Huan Wang, Lada Vukušić, Georgios Katsaros, Marko J. Rančić, Hao Hu, Josip Kukučka, Fei Gao, Hannes Watzinger, Feng Liu, Jian-Jun Zhang, Ting Wang, Daniel Loss, Yuan Yao, Jie-Yin Zhang
Publikováno v:
Advanced Materials
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is
Autor:
Josip Kukučka, Yuan Yao, Daniel Loss, Jie-Yin Zhang, Hao Hu, Jian-Jun Zhang, Lada Vukušić, Ting Wang, Gui‐Lei Wang, Christoph Kloeffel, Hannes Watzinger, Feng Liu, Georgios Katsaros, Marko J. Rančić, Fei Gao, Jian-Huan Wang
Publikováno v:
Advanced Materials. 32:2070122