Výsledky vyhledávání - "Hannes Watzinger"

Akademický článek

Autor: Hannes Watzinger, Josip Kukučka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian-Jun Zhang, Georgios Katsaros

Publikováno v: Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)

Germanium’s electronic structure and large, tunable spin-orbit coupling makes it a good material for constructing hole-based quantum devices. Here the authors demonstrate the fabrication and two-axis control of a hole spin qubit in a germanium doub

Externí odkaz: https://doaj.org/article/28689aff8fc8417097e64e2cf49645e7

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Ge/Si Quantum Wires for Quantum Computing

Autor: Gang Xu, Hannes Watzinger, Tina Wang, Hai-Ou Li, Fei Gao, Jie-Yin Zhang, Jian-Jun Zhang, Guo-Ping Guo, Ke Wang, Georgios Katsaros, Ming Ming, Josip Kukučka, Lada Vukušić, Jian-Huan Wang

Publikováno v: 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::131d089e931acc028c4a12a8b695aab2
https://doi.org/10.1109/edtm50988.2021.9420817

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Zero Field Splitting of Heavy-Hole States in Quantum Dots

Autor: Fei Gao, Lada Vukušić, Georgios Katsaros, Jian-Jun Zhang, Ting Wang, Hannes Watzinger, Karsten Held, Josip Kukučka

Publikováno v: Nano Letters

Using inelastic cotunneling spectroscopy, we observe a 55{\mu}eV zero field splitting in the spin triplet manifold of Ge hut wire quantum dots. The degeneracy of the heavy hole triplet state is lifted since the interplay of strong spin orbit coupling

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::57f78d8fdd7d47ea4edf2adf51b25ce5

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Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling

Autor: Gui‐Lei Wang, Christoph Kloeffel, Jian-Huan Wang, Lada Vukušić, Georgios Katsaros, Marko J. Rančić, Hao Hu, Josip Kukučka, Fei Gao, Hannes Watzinger, Feng Liu, Jian-Jun Zhang, Ting Wang, Daniel Loss, Yuan Yao, Jie-Yin Zhang

Publikováno v: Advanced Materials

Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17fc4c73d2932678e58eb4f2a004c61c
https://pubmed.ncbi.nlm.nih.gov/32105375

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