Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hannes S, Funk"'
Autor:
Sumit Choudhary, Daniel Schwarz, Hannes S. Funk, D. Weishaupt, Robin Khosla, Satinder K. Sharma, Jorg Schulze
Publikováno v:
IEEE Transactions on Electron Devices. 69:2725-2731
Autor:
Sumit Choudhary, Daniel Schwarz, Hannes S. Funk, Kumar Palit Sharma, Satinder K. Sharma, Jorg Schulze
Publikováno v:
2022 International Symposium on Semiconductor Manufacturing (ISSM).
Autor:
David Weißhaupt, Hannes S Funk, Michael Oehme, Dominik Bloos, Fritz Berkmann, Lukas Seidel, Inga A Fischer, Jörg Schulze
Publikováno v:
Semiconductor Science and Technology. 38:035007
Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the
Autor:
David, Weißhaupt, Hannes S, Funk, Michal, Kern, Marco M, Dettling, Daniel, Schwarz, Michael, Oehme, Christoph, Sürgers, Joris, van Slageren, Inga A, Fischer, Jörg, Schulze
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 33(8)
Low-temperature magnetoresistance measurements of n- and p-doped germanium-tin (Ge