Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Hannes Raebiger"'
Autor:
Seong-Yeon Lee, Soungmin Bae, Seonyeong Kim, Suyong Jung, Kenji Watanabe, Takashi Taniguchi, Hannes Raebiger, Ki-Ju Yee
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-7 (2024)
Abstract Phonon dispersion in crystals determines many important material properties, but its measurement usually requires large-scale facilities and is limited to bulk samples. Here, we demonstrate the measurement of full phonon dispersion along the
Externí odkaz:
https://doaj.org/article/c35df4159dcb4224a01dd95a1713c729
Autor:
Soungmin Bae, Kana Matsumoto, Hannes Raebiger, Ken-ichi Shudo, Yong-Hoon Kim, Ørjan Sele Handegård, Tadaaki Nagao, Masahiro Kitajima, Yuji Sakai, Xiang Zhang, Robert Vajtai, Pulickel Ajayan, Junichiro Kono, Jun Takeda, Ikufumi Katayama
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Valley depolarization processes in 2D transition metal dichalcogenides have been linked to acoustic phonons, but optical verification is ambiguous, due to the nearly degenerate acoustic phonon frequencies at the zone-edge. Here, the authors determine
Externí odkaz:
https://doaj.org/article/98eab289bc1a44a8889598af8b353a6e
Autor:
Yejin Kim, Soungmin Bae, Joohee Park, Trang Thi Thu Nguyen, Hye Ri Jung, William Jo, Yong-Hoon Kim, Hannes Raebiger, Seokhyun Yoon
Publikováno v:
Chemistry of Materials. 34:2972-2980
Publikováno v:
Physical Review B. 104
It has been a long-standing problem in N-electron systems as to how to solve the Dyson equation with the quasiparticle wave functions defined as ⟨Ψ^N_0∣ψ_s(r)∣Ψ^N+1_ν⟩ and ⟨Ψ^N-1_μ∣ψ_s(r)∣Ψ^N_0⟩, which are not mutually orthogo
Autor:
Mohammad Khazaei, Ahmad Ranjbar, Yoon‐Gu Kang, Yunye Liang, Rasoul Khaledialidusti, Soungmin Bae, Hannes Raebiger, Vei Wang, Myung Joon Han, Hiroshi Mizoguchi, Mohammad S. Bahramy, Thomas D. Kühne, Rodion V. Belosludov, Kaoru Ohno, Hideo Hosono
Publikováno v:
Advanced Functional Materials. 32:2110930
Autor:
Hannes Raebiger, Elif Ertekin
Publikováno v:
Characterisation and Control of Defects in Semiconductors ISBN: 9781785616556
This chapter describes typical approaches and levels of approximation and the common sources of uncertainties encountered. On one hand, it provides a generalized framework for carrying out defect calculations. On the other hand, it is intended as a g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::461cd4039d8ac8616e7324cc1708d13e
https://doi.org/10.1049/pbcs045e_ch7
https://doi.org/10.1049/pbcs045e_ch7
Autor:
Mohammad Khazaei, Yoon-Gu Kang, Hideo Hosono, Kaoru Ohno, Myung Joon Han, Soungmin Bae, Gustavo M. Dalpian, W.F. Espinosa-García, Kazuaki Kuwahata, Noriyuki Egawa, Juho Lee, Hannes Raebiger, Yong-Hoon Kim
Publikováno v:
Advanced Functional Materials. 31:2100009
Autor:
Myung Joon Han, Soungmin Bae, Kee-Joo Chang, Mohammad Khazaei, Hannes Raebiger, Yoon-Gu Kang, Kaoru Ohno, Yong-Hoon Kim
Publikováno v:
Materials Today Advances, Vol 9, Iss, Pp 100118-(2021)
Transition metal compounds are known to be tricky for ab initio calculations mainly because of the strongly localized nature of transition metal d electrons. Nonetheless, the bulk of current theoretical studies of MXenes (transition metal carbide or
Publikováno v:
The Journal of Physical Chemistry A. 120:4037-4042
We investigate positron binding to glycine and its aqueous complexes by first-principles calculation. We show that while glycine in its ground state (Gly) does not bind positrons, several of its strongly polar conformers do, and in particular, its zw
Autor:
Takanori Suzuki, Kazuki Osada, Masatoshi Tanaka, Soungmin Bae, Ken-ichi Shudo, Hannes Raebiger
Publikováno v:
The Journal of Physical Chemistry C. 120:4653-4659
The frequencies of Raman active modes of few-layer ZrS3 and ZrSe3 and their dependence on the number of layers have been investigated by Raman scattering spectroscopy and first-principles calculations. We find a considerable downshift of the frequenc