Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hannes Estl"'
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
A simulation analysis of a configurable dual channel n/p LDMOS is presented. The n, p and combined n/p channel regimes are analyzed, showing the transistors potential for enhanced saturation current density without high-temperature Safe Operating Are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ced0862cf83a5de1eadf7b6b98a87b3a
https://doi.org/10.1109/essderc.2010.5618361
https://doi.org/10.1109/essderc.2010.5618361
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82351e4938400a9fb96293c19dfab5ec
https://doi.org/10.4271/2003-01-0112
https://doi.org/10.4271/2003-01-0112
Publikováno v:
SAE Technical Paper Series.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4daa0eb232f5ec92807b6e88db3f3e68
https://doi.org/10.4271/2002-01-1303
https://doi.org/10.4271/2002-01-1303