Výsledky vyhledávání - "Hannes Behmenburg"

Akademický článek

Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes

Autor: Eleonora Secco, Heruy Taddese Mengistu, Jaime Segura-Ruíz, Gema Martínez-Criado, Alberto García-Cristóbal, Andrés Cantarero, Bartosz Foltynski, Hannes Behmenburg, Christoph Giesen, Michael Heuken, Núria Garro

Publikováno v: Nanomaterials, Vol 9, Iss 5, p 691 (2019)

Improvements in the spatial resolution of synchrotron-based X-ray probes have reached the nano-scale and they, nowadays, constitute a powerful platform for the study of semiconductor nanostructures and nanodevices that provides high sensitivity witho

Externí odkaz: https://doaj.org/article/47b180213ebd4b00bd0ec823080151e1

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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Autor: Sven Besendörfer, Hannes Behmenburg, Jochen Friedrich, Tobias Erlbacher, Holger Kalisch, Dirk Fahle, Hady Yacoub, Andrei Vescan, Elke Meissner, Thorsten Zweipfennig

Publikováno v: AIP Advances
AIP Advances, Vol 10, Iss 4, Pp 045028-045028-6 (2020)
AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905

AIP Advances 10(4), 045028 (2020). doi:10.1063/1.5141905
Published by American Inst. of Physics, New York, NY

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17babc08065a2d2f01a5ee2fbac67c79
https://publica.fraunhofer.de/handle/publica/262275

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Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

Autor: M. Eickelkamp, Hady Yacoub, Michael Heuken, Holger Kalisch, Thorsten Zweipfennig, Gerrit Lükens, Dirk Fahle, Hannes Behmenburg, Andrei Vescan

Publikováno v: IEEE Transactions on Electron Devices. 65:3192-3198

The impact of the extrinsic carbon doping level was investigated with the aim of finding the optimal level for GaN-on-Si HFETs. A tradeoff between the crystal quality degradation by carbon doping and dynamic properties of HFET structures was observed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2c3782e3187693bb4930f9d50cede1c5
https://doi.org/10.1109/ted.2018.2850066

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Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by Hard X-ray synchrotron nanoprobes

Autor: C. Giesen, J. Segura-Ruiz, Eleonora Secco, Michael Heuken, Núria Garro, Alberto García-Cristóbal, Hannes Behmenburg, Gema Martínez-Criado, Heruy Taddese Mengistu, Andrés Cantarero, Bartosz Foltynski

Publikováno v: Digital.CSIC. Repositorio Institucional del CSIC
instname
Nanomaterials
Volume 9
Issue 5
'Nanomaterials ', vol: 9, pages: 691-1-691-11 (2019)
Secco, Eleonora Mengistu, Heruy Taddese Segura-Ruiz, Jaime Martínez Criado, Gema García Cristóbal, Alberto Cantarero Sáez, Andrés Foltynski, Bartosz Behmenburg, Hannes Giesen, Christoph Heuken, Michael Garro Martínez, Núria 2019 Elemental distribution and structural characterization of GaN/InGaN core-shell single nanowires by hard X-ray synchrotron nanoprobes Nanomaterials 9 691
RODERIC. Repositorio Institucional de la Universitat de Valéncia
RODERIC: Repositorio Institucional de la Universitat de Valéncia
Nanomaterials, Vol 9, Iss 5, p 691 (2019)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5993b15171601af9c5e7b45f3420fdc1
http://hdl.handle.net/10261/182948

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Blue LED mass production in a close-coupled showerhead MOCVD tool (Conference Presentation)

Autor: Michael Heuken, Arthur Beckers, Adam R. Boyd, Olivier Feron, Hannes Behmenburg, Clifford McAleese, J. O'Dowd

Publikováno v: Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI.

We report the mass production of blue LEDs on dry-etched patterned sapphire substrates using the AIX R6 tool in a 31×4" configuration. The system was operated in a continuous run mode, i.e. cleaning the showerhead after a series of LED runs. Product

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::55021b35eb74ecd3bdc1736334e64113
https://doi.org/10.1117/12.2249271

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Autor: Gottfried Strasser, Erhard Kohn, Dionyz Pogany, C. Giesen, D. Maier, A. Alexewicz, Hannes Behmenburg, Michael Heuken, Mohammed Alomari

Publikováno v: Solid-State Electronics. 89:207-211

The impact of surface treatment of 5 nm in situ SiN passivation on the performance of InAlGaN/GaN high electron mobility transistors is analyzed. After operation at 600 °C, no device degradation is observed, confirming the thermal stability of the p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02bc9aa1a082c11d031bac885b3e6409
https://doi.org/10.1016/j.sse.2013.09.001

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Enhancement mode InAlGaN/GaN MISHFETs with plasma‐oxidised AlO x /TiO x as gate insulator

Autor: Hannes Behmenburg, Michael Heuken, Andrei Vescan, N. Ketteniss, Herwig Hahn, Holger Kalisch

Publikováno v: physica status solidi c. 10:840-843

Enhancement mode GaN-based devices can be realised i.a. by gate recessing or the utilisation of a thin barrier. Yet, as this concept bases upon an increase in barrier capacitance, the application of a gate dielectric causing a capacitance reduction r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2a37bd7129f2d40a062f25e4c1a2679
https://doi.org/10.1002/pssc.201200594

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Insulating behavior of interfaces in regrown Al 0.23 Ga 0.77 N/GaN double heterostructures on Al 0.07 Ga 0.93 N back‐barrier templates

Autor: Andrei Vescan, Horst Hahn, Michael Heuken, Hannes Behmenburg, Holger Kalisch, Ben Reuters

Publikováno v: physica status solidi c. 10:799-802

An important issue in multi-step epitaxial growth processes are the electrical characteristics of regrown interfaces. Here, we present a study on interface quality and its effect onto insulating behavior and scattering effects in planar transistors.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81507d8006424beaa00a359988b63368
https://doi.org/10.1002/pssc.201200607

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Highly n‐type doped InGaN films for efficient direct solar hydrogen generation

Autor: Ulrich Simon, V. Balmes, Andrei Vescan, C. Mauder, Michael Heuken, Ö. Tuna, Benjamin S. Gutrath, M. V. Rzheutskii, Holger Kalisch, Michael Noyong, Hannes Behmenburg, E. V. Lutsenko, G. P. Yablonskii

Publikováno v: physica status solidi c. 9:964-967

We report on the metal organic vapour phase epitaxy (MOVPE) and characterization of n-type InGaN films for application in direct solar water splitting. The 40 nm thick films exhibit an In fraction of 15% and show good structural quality and a surface

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::732f9757a9066a0164f0bee8568a0d1d
https://doi.org/10.1002/pssc.201100400

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Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE

Autor: Rolf H. Jansen, Holger Kalisch, Michael Heuken, Hannes Behmenburg, C. Giesen, Rudolf Srnanek, Jaroslav Kováč

Publikováno v: Journal of Crystal Growth. 316:42-45

In this paper, the influence of V/III molar flow ratio during AlN growth on SiC on growth mode and in-plane strain is investigated. AlN layers of ∼300 nm thickness were grown by metal-organic vapor phase epitaxy (MOVPE) on semi-insulating 6H-SiC an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb07b3b1d4b1be247de2d4c4554e6b1a
https://doi.org/10.1016/j.jcrysgro.2010.12.058

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