Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Hann-Ping Hwang"'
Autor:
Byoung Hun Lee, Hann-Ping Hwang, Cihyun Kim, Seulki Lee, Hyeji Lee, Yun Ji Kim, Jinwoo Noh, Sunwoo Heo
Publikováno v:
2017 Silicon Nanoelectronics Workshop (SNW).
Novel thin film transistor based on a graphene-ZnO Schottky junction has been demonstrated for display driver circuit applications. High transmittance over 80% in visible light wavelengths with a high on-off ratio over 104 are the merits of this devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a2fc27c2414177cbd1ea734cb94c3d8
https://doi.org/10.23919/snw.2017.8242332
https://doi.org/10.23919/snw.2017.8242332
Publikováno v:
2016 5th International Symposium on Next-Generation Electronics (ISNE).
In this paper, a novel erase method is proposed to modulate the electron tunneling region of 40 nm NAND flash memory device. The erasing electron can move to gate center from gate edge under back bias at 0.3V/-0.8V. The Fowler-Nordheim (FN) current o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0406547308cd909ba6b5de4b59cd6749
https://doi.org/10.1109/isne.2016.7543294
https://doi.org/10.1109/isne.2016.7543294
Autor:
Jone F. Chen, Kuei Fen Chang, Shang Feng Shen, Chia Yu Kao, Yen Lin Tsai, Hao Tang Hsu, Hann Ping Hwang
Publikováno v:
Semiconductor Science and Technology. 33:125019
The effect of doping concentration in the n− drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n− drift doping concentration improves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::808123a3c3f911b850f3ec24726e0ff6
https://doi.org/10.1088/1361-6641/aaeb06
https://doi.org/10.1088/1361-6641/aaeb06
Publikováno v:
Japanese Journal of Applied Physics. 57:04FD01
Device characteristics and hot-carrier-induced device degradation of n-channel MOS transistors with an off-state breakdown voltage of approximately 25 V and various Si recess depths introduced by sidewall spacer overetching are investigated. Experime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc9a9a7d571f82ed177e72fbe99179b
https://doi.org/10.7567/jjap.57.04fd01
https://doi.org/10.7567/jjap.57.04fd01
Autor:
Hann-Ping Hwang, Chan-Ching Lin, Yi-Chung Liang, Chen-Hao Huang, Tzung-Bin Huang, Kuei-Shu Chang-Liao
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
In this paper, a novel erase method is proposed to modulate the electron tunneling region of 40 nm NAND flash memory device. The erasing electron can move to gate center from gate edge under back bias at 0.3V/-0.8V. The Fowler-Nordheim (FN) current o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::513d0cec38d7ab40f95452b70d662cc1
https://doi.org/10.1109/vlsi-tsa.2015.7117583
https://doi.org/10.1109/vlsi-tsa.2015.7117583
Autor:
Duck-Hyung Lee, Euijun Cha, Kibong Moon, Jiyong Woo, S.Y. Lee, Jin Dong Song, Hann-Ping Hwang, J.M. Park, Yunmo Koo, Sungki Park
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2214168f9dc692dfc46a402de6d19041
https://doi.org/10.7567/ssdm.2013.a-6-2
https://doi.org/10.7567/ssdm.2013.a-6-2
Publikováno v:
IEEE Microwave and Wireless Components Letters. 14:304-306
A new quadrature broadside coupler is proposed, which employs an array of air-bridges to enhance directivity via its phase-equalization effect on the c-mode and /spl pi/-modes. The realization of air-bridges follows a standard MMIC fabrication proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a3e98142b143139ec8932ec5d894957
https://doi.org/10.1109/lmwc.2004.824814
https://doi.org/10.1109/lmwc.2004.824814
Publikováno v:
Japanese Journal of Applied Physics. 55:08PD04
The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f25e356021d07aca65144f61e65e5f
https://doi.org/10.7567/jjap.55.08pd04
https://doi.org/10.7567/jjap.55.08pd04
Autor:
Daeseok Lee, Seonghyun Kim, Jungho Shin, Sungjune Jung, Euijun Cha, Hann-Ping Hwang, Jiyong Woo, Wootae Lee, Jubong Park, Godeuni Choi
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f285b0a2906c4666037995319a8181
https://doi.org/10.7567/ssdm.2012.b-6-4
https://doi.org/10.7567/ssdm.2012.b-6-4
Autor:
Chunghee Cho, Eunji Park, Yongsu Lee, Minwoo Kim, Youngho Kim, Chang Goo Kang, Ukjin Jung, Jang-Joo Kim, Byoung Hun Lee, Hann-Ping Hwang
Publikováno v:
2012 IEEE Silicon Nanoelectronics Workshop (SNW).
Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO 2 substrate and their time constant, 40µsec and ∼ 370µsec, have been identified. Oxygen/H 2 O reaction at the surface of graphene was ide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46d90128ebb40e84d9277049e6d8f7ef
https://doi.org/10.1109/snw.2012.6243362
https://doi.org/10.1109/snw.2012.6243362