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Autor:
Mark Raynor, Dan Alvarez, Russell J. Holmes, Keisuke Andachi, Jeffrey J. Spiegelman, Hank Shimizu
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initi
Autor:
Jeffrey J. Spiegelman, Daniel Alvarez, Mark Raynor, Keisuke Andachi, Hank Shimizu, Russell J. Holmes
Publikováno v:
ECS Meeting Abstracts. :1273-1273
Introduction Next generation channel materials (SiGe, Ge and InGaAs) place very difficult thermal constraints ( SiN passivation layers on new channel materials SiN sidewall spacers and contact etch stop layers TiN for metal gate electrodes TiN or WN