Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Hani Sherry"'
Autor:
Chen Jiang, Ruonan Han, Mohammad Javad Emadi, Hani Sherry, Andreia Cathelin, Ehsan Afshari, Ali Mostajeran
Publikováno v:
IEEE Journal of Solid-State Circuits. 51:2596-2609
A 320 GHz fully integrated terahertz imaging system is reported. The system is composed of a phase-locked high-power transmitter and a coherent high-sensitivity subharmonic-mixing receiver, which are fabricated using a 130 nm SiGe BiCMOS technology (
Autor:
Andreia Cathelin, Hani Sherry, Ehsan Afshari, Chen Jiang, Ruonan Han, Hamidreza Aghasi, Mohammad Javad Emadi, Ali Mostajeran
Publikováno v:
IEEE Journal of Solid-State Circuits. 50:2935-2947
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( $f_{T}/f_{\max} =$ 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter struc
Autor:
Hani Sherry
Publikováno v:
2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
This paper describes general considerations for the design of highly efficient and distributed room-temperature Terahertz detectors and transmitters in (Bi)CMOS technologies. It discusses the design of industrial-grade scalable terahertz imaging syst
Autor:
R. Boulestin, F. Bailleul, Hani Sherry, E. Chataigner, Sebastien Dedieu, S. Pruvost, D. Thevenet, C. Grundrich, F. Colmagro, Marc Houdebine
Publikováno v:
ESSCIRC
This paper presents a fully integrated and spur-free fractional frequency synthesizer based on a low noise 42.5-GHz SiGe quad-core VCO locked on a standard 40-MHz crystal unit. Consequently, optimal SNR is obtained for narrow bandwidth. Reference spu
Autor:
Ali Mostajeran, Hani Sherry, Andreia Cathelin, Ehsan Afshari, Mohammad Javad Emadi, Chen Jiang, Ruonan Han
Publikováno v:
ISSCC
Terahertz imaging has been gaining increasing attention for its emerging applications in security, biomedical and material characterization. Previous works have demonstrated terahertz imagers on silicon: in [1], the authors demonstrated a 280GHz 4×4
Autor:
Chen Jiang, Ruonan Han, Hani Sherry, Ali Mostajeran, Mohammad Emadi, Andreia Cathelin, Ehsan Afshari, Hamidreza Aghasi
Publikováno v:
ISSCC
Non-ionizing terahertz imaging using solid-state integrated electronics has been gaining increasing attention over the past few years. However, there are currently several factors that deter the implementations of fully-integrated imaging systems. Du
Publikováno v:
2013 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
This paper reports on the impact of antenna impedance frequency characteristics on a broadband low-NEP operation of THz MOSFET direct detectors. New Si-lens integrated high-impedance on-chip ring antennas were developed based on a systematic co-desig
Publikováno v:
2012 37th International Conference on Infrared, Millimeter, and Terahertz Waves.
This paper reports on co-design between CMOS direct detectors and silicon lens-integrated on-chip antennas. Due the appropriate impedance characteristics of the differentially driven antenna, broadband detector operation over multiple hundred GHz cen
Autor:
Hani Sherry, Andreia Cathelin, Yan Zhao, Ullrich R. Pfeiffer, Andreas Kaiser, Janusz Grzyb, R. Al Hadi
Publikováno v:
SPIE Proceedings.
Future submillimeter-wave and THz (300GHz-3THz) imaging applications will require low-cost portable systems operating at room-temperature with a video-rate speed and capable of delivering acceptable sensitivity at the very low-power consumption level
Autor:
Richard Al Hadi, Hani Sherry, Andreas Kaiser, Andreia Cathelin, Yan Zhao, Ullrich R. Pfeiffer, Janusz Grzyb
Publikováno v:
Proceedings of 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012
IEEE International Solid-State Circuits Conference, ISSCC 2012
IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩
ISSCC
IEEE International Solid-State Circuits Conference, ISSCC 2012
IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩
ISSCC
Future imaging applications in the submillimeter-Wave range (300GHz to 3THz) require RF systems that can achieve high sensitivity and portability at low power consumption levels. In particular, CMOS process technologies are attractive due to their lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1313408972619f43666cf05ebd4ffa01
https://hal.archives-ouvertes.fr/hal-00801095
https://hal.archives-ouvertes.fr/hal-00801095