Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hangzhi Liu"'
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 878-889 (2024)
Abstract Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on curre
Externí odkaz:
https://doaj.org/article/a053026151ac4f13a69146130df9c27f
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 369-380 (2024)
The Si/SiC Cascode device has been widely accepted in various applications, however, its reliability issue still remains a major concern and needs to be extensively investigated. In this paper, the degradation of a 750 V Si/SiC Cascode device under r
Externí odkaz:
https://doaj.org/article/7f88837a788840e78d27f316628f8f34
Publikováno v:
IET Power Electronics, Vol 15, Iss 14, Pp 1502-1510 (2022)
Abstract Planar split‐gate MOSFETs (SG‐MOSFETs) are promising in high‐frequency power applications due to the fast turn on/off speeds and low switching loss. However, SG‐MOSFETs suffer from crowded electric field at the edge of the split poly
Externí odkaz:
https://doaj.org/article/906648a40cdb4ef1a1711234e9349e64
Autor:
Shiwei Liang, Yu Yang, Lei Shu, Ziyuan Wu, Bingru Chen, Hengyu Yu, Hangzhi Liu, Liang Wang, Tongde Li, Gaoqiang Deng, Jun Wang
Publikováno v:
IEEE Transactions on Electron Devices. 70:1176-1180
Publikováno v:
IEEE Transactions on Electron Devices. 69:6241-6248
Publikováno v:
IEEE Transactions on Electron Devices. 69:5104-5109
Publikováno v:
IEEE Transactions on Electron Devices. 69:4757-4760
Publikováno v:
Neuroradiology.
Publikováno v:
IEEE Transactions on Electron Devices. 68:4571-4576
It is highly desirable to monolithically integrate a high-performance freewheeling diode (FWD) in both Si and SiC power MOSFETs for power electronic applications. This is especially true for a SiC MOSFET since its inherent body diode has a very large
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 8:90-98
This article has presented a physics-based model which replicates the failure of SiC MOSFET under short-circuit (SC) case. The model is constructed on the base of the traditional circuit model of SiC MOSFET by introducing two leakage current mechanis