Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hanggyo Jung"'
Publikováno v:
npj 2D Materials and Applications, Vol 8, Iss 1, Pp 1-9 (2024)
Abstract In this study, we applied ferroelectrics to the gate stack of Field Effect Transistors (FETs) with a 2D transition-metal dichalcogenide (TMDC) channel, actively researching for sub-2nm technology node implementation. Subsequently, we analyze
Externí odkaz:
https://doaj.org/article/3bd9b6d8c89040748e257953404f9bee
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107619- (2024)
Recently, a phase-transition field effect transistor (phase-FET) integrated with a phase-transition material (PTM) is attracting attention as a steep switching device, and attempts to solve the power consumption limitation of conventional CMOS using
Externí odkaz:
https://doaj.org/article/8655bf3bb8824097a3f9db107fcc0cb3
Publikováno v:
Advanced Science, Vol 10, Iss 21, Pp n/a-n/a (2023)
Abstract Achieving low contact resistance (RC) is one of the major challenges in producing 2D FETs for future CMOS technology applications. In this work, the electrical characteristics for semimetal (Sb) and normal metal (Ti) contacted MoS2 devices a
Externí odkaz:
https://doaj.org/article/74e4eb416de34a89b5729d0d8ed78953
Autor:
Hanggyo Jung, Jeesoo Chang, Changhyun Yoo, Jooyoung Oh, Sumin Choi, Juyeong Song, Jongwook Jeon
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 4096 (2022)
In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this,
Externí odkaz:
https://doaj.org/article/d894d6f01cfb4599a9fac0da65e49c24
Publikováno v:
ACS Applied Electronic Materials. 5:2239-2248
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7270579ba7f09f55d47cb2a7918a7c26
https://doi.org/10.1021/acsaelm.3c00096
https://doi.org/10.1021/acsaelm.3c00096