Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Hang-Kyu Kang"'
Autor:
Min Baik, Ji-hoon Kyhm, Hang-Kyu Kang, Kwang-Sik Jeong, Jong Su Kim, Mann-Ho Cho, Jin Dong Song
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron mic
Externí odkaz:
https://doaj.org/article/22f60ddd39664fe28bc1d2c5fff12f56
Autor:
Sang-Hyeon Kim, Ilpyo Roh, Jae-Hoon Han, Dae-Myeong Geum, Seong Kwang Kim, Soo Seok Kang, Hang-Kyu Kang, Woo Chul Lee, Seong Keun Kim, Do Kyung Hwang, Yun Heub Song, Jin Dong Song
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://doaj.org/article/e14f70b92ca14adebb389839bfcd79c5
Autor:
Seong Keun Kim, Dae-Myeong Geum, Hang-Kyu Kang, Soo Seok Kang, Do Kyung Hwang, Jae-Hoon Han, Seong Kwang Kim, Sanghyeon Kim, Woo Chul Lee, Yun-Heub Song, Jin Dong Song, Il-Pyo Roh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 42-48 (2021)
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al0.95Ga0.05Sb barrier, which eliminates t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e770011f321351cc20af37b96e9f927
https://ieeexplore.ieee.org/document/9264257/
https://ieeexplore.ieee.org/document/9264257/
Autor:
Hang Kyu Kang, Hyoungsub Kim, Min Baik, Yu Seon Kang, Changmin Lee, Kwangsik Jeong, Mann Ho Cho, Jin Dong Song
Publikováno v:
Applied Surface Science. :1161-1169
Defects in HfO2 dielectric film caused by indium and arsenide diffusion from InAs were investigated. To investigate the dissociation of InAs during post-deposition annealing (PDA) at 600 °C, we analyzed the ratio of the elements on the surface of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2baf98d7907e7418e7dce0ca2030fed
https://doi.org/10.1016/j.apsusc.2018.10.212
https://doi.org/10.1016/j.apsusc.2018.10.212
Autor:
Mann Ho Cho, Jong Su Kim, Kwangsik Jeong, Jin Dong Song, Min Baik, Hang-Kyu Kang, Jihoon Kyhm
Publikováno v:
Scientific Reports
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron microscopy a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::714388afedf90e060b28c9cf383efd29
https://doi.org/10.1038/s41598-021-87321-9
https://doi.org/10.1038/s41598-021-87321-9
Autor:
Taeok Kim, Mann Ho Cho, Hang Kyu Kang, Jung Min Bae, Jin Dong Song, Kwangsik Jeong, Sungjin Park
Publikováno v:
Applied Surface Science. 458:964-971
The thermal conduction by the difference in the substrate of InAs nanowires (NWs) was investigated by determining the local temperature using Raman spectroscopy as an optical method. The optoelectric characteristics of the supported and suspended InA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b900ac00bf6c822a01a17db670c3345b
https://doi.org/10.1016/j.apsusc.2018.07.176
https://doi.org/10.1016/j.apsusc.2018.07.176
Autor:
Jin Dong Song, Jun Young Kim, Hang-Kyu Kang, Yoon-Bum Kim, Chong Yun Kang, Mann Ho Cho, Myoung Sub Noh
Publikováno v:
Nano Energy. 53:57-65
Vertically aligned and dense InGaAs nanowires were grown on Si (111) substrates by Au-assisted molecular beam epitaxy, and their antireflection characteristics were studied. The bandgap of InGaAs nanowires was tuned to be about 1.0 eV by adjusting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af849e4d1540466bbb0bbd0c2b0bf4c4
https://doi.org/10.1016/j.nanoen.2018.08.029
https://doi.org/10.1016/j.nanoen.2018.08.029
Autor:
Hang Kyu Kang, Dae Kyoung Kim, Jin Dong Song, Yu Seon Kang, Mann Ho Cho, Kwangsik Jeong, Min Baik
Publikováno v:
The Journal of Physical Chemistry C. 122:7226-7235
The thermal stabilities and interfacial properties of HfO2 films created on conditioned i-InP surfaces using atomic layer deposition were investigated. When HfO2 was deposited on sulfur passivation...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fe453ea386d38fb1dfb62becd923801
https://doi.org/10.1021/acs.jpcc.8b00524
https://doi.org/10.1021/acs.jpcc.8b00524
Autor:
Sunjung Kim, Jae Pyung Ahn, Jung Min Bae, Mann Ho Cho, Yu Seon Kang, Jimin Chae, Hang Kyu Kang, Seung Hoon Oh, Woobin Song, Dongchan Suh, Jin Won Ma
Publikováno v:
Applied Surface Science. 419:1-8
We investigated the conduction characteristics of plasma-doped Si nanowires (NWs) after various rapid thermal annealing (RTA) times. The plasma doping (PD) process developed a highly-deposited B layer at the NW surface. RTA process controls electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0132045e3f092110ad927c6b2f336c62
https://doi.org/10.1016/j.apsusc.2017.05.015
https://doi.org/10.1016/j.apsusc.2017.05.015
Autor:
Jin Dong Song, Yu Seon Kang, Mann Ho Cho, Hyoungsub Kim, Youngseo An, Hang Kyu Kang, Dae Kyoung Kim, Min Baik
Publikováno v:
ACS Applied Materials & Interfaces. 9:17526-17535
The passivation effect of an Al2O3 layer on the electrical properties was investigated in HfO2–Al2O3 laminate structures grown on indium phosphide (InP) substrate by atomic-layer deposition. The chemical state obtained using high-resolution X-ray p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9938556865a941bffe2c009b6634a4e0
https://doi.org/10.1021/acsami.7b00099
https://doi.org/10.1021/acsami.7b00099