Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Hang Zang"'
Publikováno v:
Nuclear Engineering and Technology, Vol 53, Iss 7, Pp 2357-2363 (2021)
Silicon carbide is widely used in radiation environments due to its excellent properties. However, when exposed to the strong radiation environment constantly, plenty of defects are generated, thus causing the material performance downgrades or failu
Externí odkaz:
https://doaj.org/article/92df6e7e51fa4e02a93117e25343f243
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-10 (2021)
Abstract Ultra-wide band-gap nitrides have huge potential in micro- and optoelectronics due to their tunable wide band-gap, high breakdown field and energy density, excellent chemical and thermal stability. However, their application has been severel
Externí odkaz:
https://doaj.org/article/140e562a6c814998ba3234b10cd8dd3d
Publikováno v:
International Journal of Smart and Nano Materials, Vol 11, Iss 3, Pp 288-297 (2020)
Two-dimensional (2D) semiconductors exhibit great potential to minimize the size and drastically reduce the energy consumption of optoelectronic devices due to promising features induced by quantum confinement. It has achieved many successes in infra
Externí odkaz:
https://doaj.org/article/db5048728a1b4df0961077d80bf8ae2e
Publikováno v:
Nuclear Engineering and Technology, Vol 52, Iss 7, Pp 1537-1544 (2020)
Molecular dynamics (MD) simulations were conducted to investigate the temperature effects on the primary damage in gallium nitride (GaN) material. Five temperatures ranging from 300 K to 900 K were studied for 10 keV Ga primary knock-on atom (PKA) wi
Externí odkaz:
https://doaj.org/article/e7c02ad1feee434181ea8ca441da0367
Autor:
Hang Zang, Xiaojuan Sun, Ke Jiang, Yang Chen, Shanli Zhang, Jianwei Ben, Yuping Jia, Tong Wu, Zhiming Shi, Dabing Li
Publikováno v:
Advanced Science, Vol 8, Iss 18, Pp n/a-n/a (2021)
Abstract Single‐photon sources based on solid‐state material are desirable in quantum technologies. However, suitable platforms for single‐photon emission are currently limited. Herein, a theoretical approach to design a single‐photon emitter
Externí odkaz:
https://doaj.org/article/ee3decc4b22d4796bf252356b9104709
Autor:
Huan He, Wenbo Liu, Pengbo Zhang, Wenlong Liao, Dayin Tong, Lin Yang, Chaohui He, Hang Zang, Hongxiang Zong
Publikováno v:
Materials, Vol 13, Iss 16, p 3627 (2020)
Understanding the properties of defects is crucial to design higher performance semiconductor materials because they influence the electronic and optical properties significantly. Using ab initio calculations, the dynamics properties of nitrogen inte
Externí odkaz:
https://doaj.org/article/10d2cfdacbbe42b0a4a79f4b49597ffb
Publikováno v:
Molecules, Vol 24, Iss 8, p 1500 (2019)
Raman spectra of human skin obtained by laser excitation have been used to non-invasively detect blood glucose. In previous reports, however, Raman spectra thus obtained were mainly derived from the epidermis and interstitial fluid as a result of the
Externí odkaz:
https://doaj.org/article/297d93a2a8ed43b096d3bb0a291cd220
Publikováno v:
Materials, Vol 9, Iss 2, p 105 (2016)
Nanostructured (NS) materials may have different irradiation resistance from their coarse-grained (CG) counterparts. In this review, we focus on the effect of grain boundaries (GBs)/interfaces on irradiation induced microstructure evolution and the i
Externí odkaz:
https://doaj.org/article/5de9220b2ca04e718513e6f6c9985070
Autor:
Xiaojuan Sun, Jiaen Sui, Jianwei Ben, Hang Zang, Ke Jiang, Shanli Zhang, Shunpeng Lv, Zhiming Shi, Tong Wu, Dabing Li
Publikováno v:
CrystEngComm. 25:1903-1909
The basal stacking fault (BSF) annihilation mechanism in a-plane AlN during HTA is studied both experimentally and theoretically.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d6a8028941d5561ceef1f7aa7054e9
https://doi.org/10.1039/d2ce01654k
https://doi.org/10.1039/d2ce01654k
Autor:
Yang Chen, Hang Zang, Jianwei Ben, Shanli Zhang, Ke Jiang, Zhiming Shi, Yuping Jia, Mingrui Liu, Xiaojuan Sun, Dabing Li
Publikováno v:
Crystal Growth & Design. 23:1162-1171
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc8022762f12071a1169710b3e81df6
https://doi.org/10.1021/acs.cgd.2c01273
https://doi.org/10.1021/acs.cgd.2c01273