Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Hanearl Jung"'
Autor:
Ohyung Kwon, Il Kwon Oh, Se-Hun Kwon, Woo-Jae Lee, Sanghun Lee, Woo-Hee Kim, Hyungjun Kim, Hanearl Jung, Bo Eun Park, Chang Mo Yoon
Publikováno v:
ACS Applied Materials & Interfaces. 10:40286-40293
A method for significantly increasing the growth rates (GRs) of high- k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O2 plasma oxidant was developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13502d0f88d7a05f26559ce2d6087dca
https://doi.org/10.1021/acsami.8b14244
https://doi.org/10.1021/acsami.8b14244
Autor:
Hanearl Jung, Woo-Hee Kim, Jae Min Myoung, Whang Je Woo, Hyungjun Kim, Bo Eun Park, Yun Cheol Kim, Christian Dussarrat, Satoko Gatineau, Il Kwon Oh, Su Jeong Lee
Publikováno v:
ACS Applied Materials & Interfaces. 10:2143-2150
We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In–Ga–Zn–O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2229acb608313c10db4b7a33f7c198
https://doi.org/10.1021/acsami.7b14260
https://doi.org/10.1021/acsami.7b14260
Autor:
Han-Bo-Ram Lee, Chang Mo Yoon, Tae Hyung Kim, Zonghoon Lee, Il Kwon Oh, Hanearl Jung, Kangsik Kim, Geun Young Yeom, Hyungjun Kim, Gilsang Yoo, Chang Wan Lee
Publikováno v:
Applied Surface Science. 387:109-117
Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d884a74e12bb9542b1a09d21bd942c
https://doi.org/10.1016/j.apsusc.2016.06.048
https://doi.org/10.1016/j.apsusc.2016.06.048
Autor:
Hyungjun Kim, Hanearl Jung, Kyong Nam Kim, Geun Young Yeom, Il Kwon Oh, Hyo Ki Hong, Ki Seok Kim, Zonghoon Lee
Publikováno v:
Carbon. 104:119-124
The polymer residue remaining on chemical-vapor-deposited graphene after its transfer to the substrate and subsequent lithographic patterning tends to cause problems such as decrease in electron mobility, and unwanted doping. In this study, by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bca1294351b1d7dfaabe6b988a74af1
https://doi.org/10.1016/j.carbon.2016.03.054
https://doi.org/10.1016/j.carbon.2016.03.054
Autor:
Hanearl Jung, Jeong Gyu Song, Han-Bo-Ram Lee, Whang Je Woo, Il Kwon Oh, Taewook Nam, Wan-Joo Maeng, Hyungjun Kim
Publikováno v:
IEEE Electron Device Letters. 37:599-602
The effects of TaN Cu diffusion barrier in Cu-gate ZnO:N thin-film transistors (TFTs) were studied. Bias stress tests were performed on Cu-gate TFTs with atomic layer deposited Al2O3 and HfO2 gate insulators. The mobility, the threshold voltage, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba3f2b498e6bdebaa7509f61aa473681
https://doi.org/10.1109/led.2016.2549035
https://doi.org/10.1109/led.2016.2549035
Autor:
Hanearl Jung, Woo-Hee Kim, Clement Lansalot-Matras, Han-Bo-Ram Lee, Il Kwon Oh, Hyungjun Kim, Su Jeong Lee, Chang Wan Lee, Jae Min Myoung
Publikováno v:
Journal of Materials Science. 51:5082-5091
The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e6ca4ff8a4c3b9536ee1f4a4bd67538
https://doi.org/10.1007/s10853-016-9811-0
https://doi.org/10.1007/s10853-016-9811-0
Autor:
Hanearl, Jung, Il-Kwon, Oh, Chang Mo, Yoon, Bo-Eun, Park, Sanghun, Lee, Ohyung, Kwon, Woo Jae, Lee, Se-Hun, Kwon, Woo-Hee, Kim, Hyungjun, Kim
Publikováno v:
ACS applied materialsinterfaces. 10(46)
A method for significantly increasing the growth rates (GRs) of high- k oxide thin films grown via plasma-enhanced atomic layer deposition (PE-ALD) by enhancing the plasma density through the addition of Ar gas to the O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::656b942a7aa10f4f6bbd2c01ca14b662
https://pubmed.ncbi.nlm.nih.gov/30358984
https://pubmed.ncbi.nlm.nih.gov/30358984
Autor:
Hanearl, Jung, Woo-Hee, Kim, Bo-Eun, Park, Whang Je, Woo, Il-Kwon, Oh, Su Jeong, Lee, Yun Cheol, Kim, Jae-Min, Myoung, Satoko, Gatineau, Christian, Dussarrat, Hyungjun, Kim
Publikováno v:
ACS applied materialsinterfaces. 10(2)
We report the effect of Y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e593cb93e56f99b7a764ff8c7a5ac9db
https://pubmed.ncbi.nlm.nih.gov/29277990
https://pubmed.ncbi.nlm.nih.gov/29277990
Autor:
Kwanpyo Kim, Han-Bo-Ram Lee, Mi Jin Lee, Hyungjun Kim, Seoung-Ki Lee, Jong Hyun Ahn, Jukka T. Tanskanen, Il Kwon Oh, Hanearl Jung, Kangsik Kim, Chang Wan Lee, Zonghoon Lee
Publikováno v:
Chemistry of Materials. 27:5868-5877
We investigated nucleation and growth characteristics of atomic layer deposition (ALD) HfO2 on exfoliated and chemical vapor deposition (CVD) graphene by using two Hf precursors, tetrakis(dimethylamino)hafnium (TDMAH) and hafnium tetrachloride (HfCl4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dadb1c931174c38730bbbf0852f12f2
https://doi.org/10.1021/acs.chemmater.5b01226
https://doi.org/10.1021/acs.chemmater.5b01226
Autor:
Hanearl Jung, Ki Yeung Mun, Soo-Hyun Kim, Taejin Choi, Chang Wan Lee, Hyungjun Kim, Jusang Park
Publikováno v:
Applied Surface Science. 343:128-132
A carbon tetrabromide (CBr 4 ) precursor was employed for the chemical vapor deposition (CVD) of graphene, and the graphene growth characteristics as functions of the following key factors were then investigated: growth time, growth temperature, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc4cb75dd2c230d6b36ce5c5dcc21b8
https://doi.org/10.1016/j.apsusc.2015.03.093
https://doi.org/10.1016/j.apsusc.2015.03.093