Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Hancheng Zhong"'
Autor:
Hancheng Zhong, Ying Yu, Ziyang Zheng, Zhengqing Ding, Xuebo Zhao, Jiawei Yang, Yuming Wei, Yingxin Chen, Siyuan Yu
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-10 (2023)
Abstract Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their excell
Externí odkaz:
https://doaj.org/article/5285709eb9c643a3a9296ea748b4c19a
Publikováno v:
2022 Asia Communications and Photonics Conference (ACP).
Publikováno v:
Asia Communications and Photonics Conference 2021.
We configure a mode converter for the conversion of the higher-order mode (TE1) output from deep-etched laterally-coupled distributed feedback (DFB) laser into the desired fundamental mode (TE0), with a high efficiency of 98.9% at 1310 nm and >95% ov
Publikováno v:
Nanotechnology. 31(49)
Symmetric droplet-etched quantum dots (QDs) are the leading candidate for generating high-performance polarization-entangled photon pairs. One of the challenges is how to precisely engineer the properties of QDs by controlling the morphology of etche
Publikováno v:
Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC).
We propose an algorithm based on split-step time domain dynamic modeling (SS- TDDM) to solve the time-dependent coupled wave equations of the traveling domain wave model (TDWM). Using this effective and high-speed model, we analyze the spontaneous mo
Publikováno v:
Asia Communications and Photonics Conference/International Conference on Information Photonics and Optical Communications 2020 (ACP/IPOC).
An ultra-low relative intensity noise of less than -155 dB/Hz in the frequency range of 5–20 GHz is demonstrated in single transverse mode 1.3 µm InAs/GaAs quantum dot Fabry-Perot lasers. Their different performance in the excited-state and the gr
Publikováno v:
Nanotechnology. 30:485001
III-V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a signi