Výsledky vyhledávání - "Hancheng Liang"

Akademický článek

Selecting an appropriate all-oral short-course regimen for patients with multidrug-resistant or pre-extensive drug-resistant tuberculosis in China: A multicenter prospective cohort study

Autor: Liang Fu, Xilin Zhang, Juan Xiong, Feng Sun, Taoping Weng, Yang Li, Peize Zhang, Hui Li, Qianting Yang, Yi Cai, Hancheng Liang, Qiuqi Chen, Zhaoqing Wang, Lei Liu, Xinchun Chen, Wenhong Zhang, Guofang Deng

Publikováno v: International Journal of Infectious Diseases, Vol 135, Iss , Pp 101-108 (2023)

Objectives: Long, ineffective, and toxic regimens hinder the treatment of patients with multidrug-resistant tuberculosis (MDR-TB) and pre-extensive drug-resistant tuberculosis (pre-XDR-TB). Methods: We conducted a multicenter cohort study to prospect

Externí odkaz: https://doaj.org/article/27a3d04a958b4e26942255aa5c84c63d

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Akademický článek

Insignificant difference in culture conversion between bedaquiline-containing and bedaquiline-free all-oral short regimens for multidrug-resistant tuberculosis

Autor: Liang Fu, Taoping Weng, Feng Sun, Peize Zhang, Hui Li, Yang Li, Qianting Yang, Yi Cai, Xilin Zhang, Hancheng Liang, Xinchun Chen, Zhaoqin Wang, Lei Liu, Wenhong Zhang, Guofang Deng

Publikováno v: International Journal of Infectious Diseases, Vol 111, Iss , Pp 138-147 (2021)

Background: Multidrug-resistant tuberculosis (MDR-TB) patients have been suffering long, ineffective, and toxic treatment until short-course injectable-free regimens emerged. However, the new WHO-recommended regimens might be less feasible in the rea

Externí odkaz: https://doaj.org/article/feb4b25d0f9048098eacf77f796f6671

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Insignificant difference in culture conversion between bedaquiline-containing and bedaquiline-free all-oral short regimens for multidrug-resistant tuberculosis

Autor: Taoping Weng, Zhaoqing Wang, Hui Li, Xinchun Chen, Lei Liu, Feng Sun, Guofang Deng, Peize Zhang, Hancheng Liang, Yang Li, Qianting Yang, Xilin Zhang, Wenhong Zhang, Yi Cai, Liang Fu

Publikováno v: International Journal of Infectious Diseases, Vol 111, Iss, Pp 138-147 (2021)

Background Multidrug-resistant tuberculosis (MDR-TB) patients have been suffering long, ineffective, and toxic treatment until short-course injectable-free regimens emerged. However, the new WHO-recommended regimens might be less feasible in the real

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f00e7bb12ca8a3e04c255c77bdc3f444
https://pubmed.ncbi.nlm.nih.gov/34454119

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Measurement of stress in a synthetic diamond substrate using the photoelastic method

Autor: Hancheng Liang, Andrei Vescan, Ken K. Chin, Erhard Kohn

Publikováno v: Diamond and Related Materials. 5:664-668

The residual stress in a synthetic diamond substrate was analyzed using an automatic data acquisition and analysis system based on photoelastic principles. Digital image processing techniques were applied to improve the quality of the sensed images,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e97c670038c54f224b3422e4dd64fa9
https://doi.org/10.1016/0925-9635(95)00455-6

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A new method of determining the stress state in microelectronic materials

Autor: Ken K. Chin, Hancheng Liang, Shounan Zhao

Publikováno v: Measurement Science and Technology. 7:102-105

This paper introduces a new technique of determining the stress in microelectronic materials by combining photoelasticity and Fourier analysis. The approach uses a continuously rotating analyser to determine the photoelastic parameters from a Fourier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a58dd55b110adde54a245b32c5e931b
https://doi.org/10.1088/0957-0233/7/1/014

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Two‐dimensional state of stress in a silicon wafer

Autor: Hancheng Liang, Ganming Qin, Yongxiong Pan, Shounan Zhao, Ken K. Chin

Publikováno v: Journal of Applied Physics. 71:2863-2870

Two‐dimensional state of stress in (001) and (111) silicon wafer is studied with infrared photoelasticity. In two widely used groups of coordinate systems, the silicon piezo‐optical coefficient tensors due to photoelastic anisotropy of silicon cr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd25a117891dbbeb85cf79e5f5ce92dc
https://doi.org/10.1063/1.351017

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Compact model of LDMOS for circuit simulation

Autor: Yutao Ma, Zhihong Liu, Hancheng Liang, Min-Chie Jeng, James Ma, Ping Chen

Publikováno v: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

A new compact LDMOS is introduced in this paper for circuit simulation. Features covered in this model relevant for a LDMOS device include: unique bias dependent drift region resistance model accounting for velocity saturation, bias dependent overlap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d45a2168f51b866c7b1294190f72570f
https://doi.org/10.1109/icsict.2006.306189

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