Výsledky vyhledávání - "Hanaue, Yasuhiro"

移動液相線ゾーン法についてのモデルと実験研究

Autor: Kinoshita, Kyoichi, Nakamura, Hirohiko, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi

Publikováno v: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystals. :11-18

One dimensional TLZ (Traveling Liquidus-Zone) growth model has been developed and the importance of accurate measurements of temperature gradients in the liquidus-zone has been revealed because sample translation rates for growing homogeneous crystal

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::a28a8587df6fbba9c7b04d687dc2accf
http://id.nii.ac.jp/1696/00042834/

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フォトルミネッセンスを用いたIn(x)Ga(1-x)As組成の2次元マッピング

Autor: Islam, M. R., Verma, P., Suzuki, Masaru, Yamada, Masayoshi, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi

A computer-controlled scanning photoluminescence (PL) mapping system has been developed to investigate the two-dimensional variation of composition in bulk In(x)Ga(1-x)As crystals. The accuracy of PL results was confirmed by comparing with those obta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::0d588165a4d4f92529012265d61361dd
http://id.nii.ac.jp/1696/00042839/

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バルクなIn(x)Ga(1-x)As結晶における多結晶化と残余歪みの研究

Autor: Islam, M. R., Verma, P., Yamada, Masayoshi, Kodama, Shigeo, Hanaue, Yasuhiro, Kinoshita, Kyoichi

Micro-Raman scattering and photoluminescence (PL) studies were performed to understand the polycrystallization mechanism in bulk In(x)Ga(1-x)As crystal grown by the two-step multi-component zone melting (MCZM) method. Raman studies were also performe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::8b1cfd2ee62639ad69757afa4d912bb7
http://id.nii.ac.jp/1696/00042838/

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移行液相ゾーン法の定量的モデリング

Autor: Nakamura, Hirohiko, Hanaue, Yasuhiro, Kinoshita, Kyoichi, Yoda, Shinichi

Publikováno v: 宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2000): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs). Growth of Homogeneous Crystals. :19-40

Traveling Liquidus-Zone (TLZ) Method, which was developed by NASDA, is a powerful method to grow compositionally homogeneous semiconductor mixed crystals. Experimentally, successful results have been obtained in the laboratory. However, there was no

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::93c46bd5d46ea2818cafa678f97d63f5
http://id.nii.ac.jp/1696/00042539/

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多成分ゾーン溶融法を用いたIn(sub 0.3)Ga(sub 0.7)As種結晶の調製

Autor: Kodama, Shigeo, Kinoshita, Kyoichi, Hanaue, Yasuhiro, Yoda, Shinichi

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method is currently under way for space experiments. In a sample configuration with an InAs crystal sandwiched between GaAs seed and feed crystals, the x-value of growin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::28aa84bf8ce7fd1499390b1bc6ffe811
http://id.nii.ac.jp/1696/00042542/

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移行液相ゾーン法によるIn(sub x)Ga(sub 1-x)As均質単結晶成長の実験研究

Autor: Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Kinoshita, Kyoichi

Newly invented "Traveling Liquidus-Zone" (TLZ) method was applied to grow In(0.3)Ga(0.7)As single crystals. Homogeneous growth conditions were confirmed experimentally though controlling temperature gradient in the liquidus-zone and accurate measurem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::4a1dbfe09bdc869c6d7a2c7d7a291803
http://id.nii.ac.jp/1696/00042538/

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InAsの勾配濃度をもつInGaAs初期物質の調製

Autor: Hirota, Ryu, Tatsumi, Masami, Hanaue, Yasuhiro, Kinoshita, Kyoichi

InGaAs starting materials for the crystal growth by the TLZ (Traveling Liquides Zone) method were prepared by the directionally solidification method. The materials have a micro- and microscopically smooth InAs concentration profile without occurrenc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=jairo_______::20a05b4b1190c6821ff7581cb039f2c3
http://id.nii.ac.jp/1696/00042541/

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