Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Hananova, A."'
Publikováno v:
Semiconductors. 51:1490-1494
A method for mathematical processing of the results of measurements of the capacitance–voltage characteristics for an AlGaN/GaN HEMT (high electron mobility transistor) before and after γ-neutron irradiation with a fluence of 0.4 × 1014 cm–2 is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf82b82bcdba4dfac4ac5665658ee20
https://doi.org/10.1134/s1063782617110264
https://doi.org/10.1134/s1063782617110264
Autor:
V. I. Egorkin, V. E. Zemliakov, A. V. Saharov, G. V. Medvedev, A. F. Zazul’nokov, E. A. Tarasova, A. V. Nezhenzev, E. E. Zavarin, E. S. Obolenskaya, S. V. Obolensky, V. V. Lundin, A. V. Hananova
Publikováno v:
Semiconductors. 50:1574-1578
The sensitivity of classical n +/n – GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to γ-neutron exposure is studied. The levels of their radiation hardness were determined. A met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57f1b76ac7a3a279c898257a8222171d
https://doi.org/10.1134/s1063782616120216
https://doi.org/10.1134/s1063782616120216
Publikováno v:
Semiconductors; Nov2017, Vol. 51 Issue 11, p1490-1494, 5p
Autor:
Tarasova, E., Obolenskaya, E., Hananova, A., Obolensky, S., Zemliakov, V., Egorkin, V., Nezhenzev, A., Saharov, A., Zazul'nokov, A., Lundin, V., Zavarin, E., Medvedev, G.
Publikováno v:
Semiconductors; Dec2016, Vol. 50 Issue 12, p1574-1578, 5p
Autor:
Nedoshivina, A. D.1 (AUTHOR) nnastasiaa@rambler.ru, Makartsev, I. V.1,2 (AUTHOR), Obolensky, S. V.1,2 (AUTHOR)
Publikováno v:
Semiconductors. Jun2022, Vol. 56 Issue 6, p346-351. 6p.
Akademický článek
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Autor:
Tarasova, E. A.1 (AUTHOR) tarasova@rf.unn.ru, Obolensky, S. V.1 (AUTHOR), Khazanova, S. V.1 (AUTHOR), Grigoryeva, N. N.1 (AUTHOR), Golikov, O. L.1 (AUTHOR), Ivanov, A. B.1 (AUTHOR), Puzanov, A. S.1 (AUTHOR)
Publikováno v:
Semiconductors. Sep2020, Vol. 54 Issue 9, p1155-1160. 6p.
Autor:
Venediktov, M. M.1 thelen@yandex.ru, Tarasova, E. A.2, Bozhen’kina, A. D.2, Obolensky, S. V.2 obolensk@rf.unn.ru, Elesin, V. V.3, Chukov, G. V.3, Metelkin, I. O.3, Krevskiy, M. A.4, Dukov, D. I.4, Fefelov, A. G.4
Publikováno v:
Semiconductors. Dec2018, Vol. 52 Issue 12, p1518-1524. 7p.
Autor:
Yakovlev, G. E.1 geyakovlev@etu.ru, Dorokhin, M. V.2, Zubkov, V. I.1, Dudin, A. L.3, Zdoroveyshchev, A. V.2, Malysheva, E. I.2, Danilov, Yu. A.2, Zvonkov, B. N.2, Kudrin, A. V.2
Publikováno v:
Semiconductors. Aug2018, Vol. 52 Issue 8, p1004-1011. 8p.