Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Han-Wook Song"'
Autor:
Yuxuan Zhang, Mingyuan Liu, Hyo-Young Yeom, Byung-Hyuk Jun, Jinwook Baek, Kwangsoo No, Han-Wook Song, Sunghwan Lee
Publikováno v:
JPhys Materials, Vol 7, Iss 1, p 015011 (2024)
We report on the enhancement of electrical properties of unsubstituted polythiophene (PT) through oxidative chemical vapor deposition (oCVD) and mild plasma treatment. The work function of p-type oCVD PT increases after the treatment, indicating the
Externí odkaz:
https://doaj.org/article/08592b3702824800bed83ab835357225
Autor:
Katherine N. Klokkevold, Weston Keeven, Dong Hun Lee, Michael Clevenger, Mingyuan Liu, Kwangsoo No, Han Wook Song, Sunghwan Lee
Publikováno v:
AIP Advances, Vol 12, Iss 10, Pp 105224-105224-6 (2022)
The bonding of ceramic to metal has been challenging due to the dissimilar nature of the materials, particularly different surface properties and the coefficients of thermal expansion (CTE). To address the issues, gas phase-processed thin metal films
Externí odkaz:
https://doaj.org/article/db88c82456d14e00b85f0fc0252436da
Publikováno v:
Measurement: Sensors, Vol 18, Iss , Pp 100169- (2021)
As the harmfulness of mercury has recently emerged, the development of a new concept of primary standard that does not use mercury is required in the low vacuum field. Among these new pressure realization methods, recently, theres have been a lot of
Externí odkaz:
https://doaj.org/article/d7dd29b0699e4ff2b05c160a6aafd1c2
Publikováno v:
Nanoscale. 15:4195-4218
This review enhances a fundamental understanding of the degradation mechanisms of Ni-based layered cathodes under fast-charging conditions from atomic to electrode scales. Design strategies for enhancing fast-charging performance are also suggested.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::491dd3de42be3996c6ac0248d792c54e
https://doi.org/10.1039/d2nr05701h
https://doi.org/10.1039/d2nr05701h
Publikováno v:
Materials Advances. 4:1850-1875
A memristor is a promising synaptic device for neuromorphic computing. This review article encompasses various instrumental characterization methods which enhance a fundamental understanding of the switching and reliability mechanisms of memristors.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83b443fa3029f1d67dca258eaa53ba9e
https://doi.org/10.1039/d3ma00069a
https://doi.org/10.1039/d3ma00069a
Autor:
Dong Hun Lee, Yuxuan Zhang, Sung-Jin Chang, Honghwi Park, Chung Soo Kim, Jinwook Baek, Jeongmin Park, Kwangsoo No, Han Wook Song, Hongsik Park, Sunghwan Lee
Publikováno v:
ACS Applied Materials & Interfaces. 14:53999-54011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bebff764f36478cff10e22a412f0d0
https://doi.org/10.1021/acsami.2c15719
https://doi.org/10.1021/acsami.2c15719
Autor:
Yuxuan Zhang, Chung Soo Kim, Han Wook Song, Sung-Jin Chang, Hyeonghun Kim, Jeongmin Park, Shan Hu, Kejie Zhao, Sunghwan Lee
Publikováno v:
Energy Storage Materials. 48:1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4454448e49e0cdba74637239880b869
https://doi.org/10.1016/j.ensm.2022.03.001
https://doi.org/10.1016/j.ensm.2022.03.001
Autor:
Mingyuan Liu, Fei Qin, Molly Rothschild, Yuxuan Zhang, Dong Hun Lee, Kwangsoo No, Han Wook Song, Sunghwan Lee
Publikováno v:
Journal of Electronic Materials. 51:1813-1819
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7532dc1744a4ca84968a1b41002d0a1
https://doi.org/10.1007/s11664-022-09453-6
https://doi.org/10.1007/s11664-022-09453-6
Publikováno v:
Bulletin of the Korean Chemical Society. 43:612-619
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c087ef8bfdfe26cb2137e0d6276b881d
https://doi.org/10.1002/bkcs.12497
https://doi.org/10.1002/bkcs.12497
Autor:
Hyeonghun Kim, Anne M. Lucietto, Michael Clevenger, Giyong Kim, Dong Kyun Ko, Sunghwan Lee, Kwangsoo No, Sung Yeol Kim, Chung Soo Kim, Dong Hun Lee, Han Wook Song, Hongsik Park, Mingyuan Liu, Honghwi Park
Publikováno v:
ACS Applied Materials & Interfaces. 13:55676-55686
The fabrication of oxide-based p-n heterojunctions that exhibit high rectification performance has been difficult to realize using standard manufacturing techniques that feature mild vacuum requirements, low thermal budget processing, and scalability
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84933b38bb9c9474578b7e8ecf204968
https://doi.org/10.1021/acsami.1c16222
https://doi.org/10.1021/acsami.1c16222