Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Han-Tung Chang"'
Autor:
Han-Tung Chang, 張翰東
96
Both the durability problem and service life prediction of reinforced concrete(RC) structures are very important in civil engineering all over the world. The corrosion of RC structures due to chloride ion penetration into concrete is occurred
Both the durability problem and service life prediction of reinforced concrete(RC) structures are very important in civil engineering all over the world. The corrosion of RC structures due to chloride ion penetration into concrete is occurred
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/45143460529925178186
Publikováno v:
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).
We study the impact of random dopant fluctuation (RDF) on electrical characteristics of 10-nm-gate high-κ/metal gate gate-all-around silicon nanowire MOSFET devices. To provide the best accuracy of device simulation, model parameters are validated b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4628f7c634e81f5f9961842ffb2237c
https://doi.org/10.1109/nano.2016.7751556
https://doi.org/10.1109/nano.2016.7751556
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
In this work, process variation effect (PVE), work function fluctuation (WKF), and random dopant fluctuation (RDF) on 10-nm high-K/metal gate gate-all-around silicon nanowire MOSFET devices using full-quantum-mechanically validated and experimentally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f47cab8c1dbcc2b62d42b7e3e6af5a88
https://doi.org/10.1109/iedm.2015.7409827
https://doi.org/10.1109/iedm.2015.7409827
Publikováno v:
2014 International Workshop on Computational Electronics (IWCE).
Enhancement mode AlGaN/GaN high electron mobility transistor with p-InAlN gate is designed and successfully studied its electrical properties. Threshold voltage of the device is 1.9 V, which is required magnitude of threshold voltage for real device.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797028a8e12bce853b39dcc90621aae4
https://doi.org/10.1109/iwce.2014.6865876
https://doi.org/10.1109/iwce.2014.6865876
Autor:
Yu-Yu Chen, Li-Wen Chen, Chieh-Yang Chen, Han-Tung Chang, Wen-Tsung Huang, Sheng-Chia Hsu, Chin-Min Yang, Yiming Li
Publikováno v:
2013 13th IEEE International Conference on Nanotechnology (IEEE-NANO 2013).
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-κ / metal gate n- and p-type bulk fin-type
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb99ef1e36f705ff27538a1e9725e5b4
https://doi.org/10.1109/nano.2013.6720994
https://doi.org/10.1109/nano.2013.6720994
Autor:
Yiming Li, Han-Tung Chang, Li-Wen Chen, Chieh-Yang Chen, Chin-Min Yang, Wen-Tsung Huang, Sheng-Chia Hsu, Yu-Yu Chen
Publikováno v:
71st Device Research Conference.
The HKMG bulk FinFET has been one of major device technologies. However, the bulk FinFETs' characteristics has been affected to different extents by various fluctuation sources, such as random dopants (RDs), interface traps (ITs), work functions (WKs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06a7dcedcf4973e29aa01bbccb04d7ff
https://doi.org/10.1109/drc.2013.6633831
https://doi.org/10.1109/drc.2013.6633831
Publikováno v:
70th Device Research Conference.
Management of process variation and random fluctuation is one of severe challenges in scaling down silicon-based devices continuously according to Moore's law. Emerging fluctuation sources [1‒3] consists of the most critical random dopant fluctuati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c39779cc37a58317aec26af4674bdf6
https://doi.org/10.1109/drc.2012.6256976
https://doi.org/10.1109/drc.2012.6256976